Spontaneous Anomalous Hall Effect Arising from an Unconventional Compensated Magnetic Phase in a Semiconductor
Autor: | R. D. Gonzalez Betancourt, J. Zubáč, R. Gonzalez-Hernandez, K. Geishendorf, Z. Šobáň, G. Springholz, K. Olejník, L. Šmejkal, J. Sinova, T. Jungwirth, S. T. B. Goennenwein, A. Thomas, H. Reichlová, J. Železný, D. Kriegner |
---|---|
Rok vydání: | 2023 |
Předmět: | |
Zdroj: | Physical Review Letters. 130 |
ISSN: | 1079-7114 0031-9007 |
Popis: | The anomalous Hall effect, commonly observed in metallic magnets, has been established to originate from the time-reversal symmetry breaking by an internal macroscopic magnetization in ferromagnets or by a non-collinear magnetic order. Here we observe a spontaneous anomalous Hall signal in the absence of an external magnetic field in an epitaxial film of MnTe, which is a semiconductor with a collinear antiparallel magnetic ordering of Mn moments and a vanishing net magnetization. The anomalous Hall effect arises from an unconventional phase with strong time-reversal symmetry breaking and alternating spin polarization in real-space crystal structure and momentum-space electronic structure. The anisotropic crystal environment of magnetic Mn atoms due to the non-magnetic Te atoms is essential for establishing the unconventional phase and generating the anomalous Hall effect. 34 pages, 14 figures |
Databáze: | OpenAIRE |
Externí odkaz: |