Thermal stability improvement of metal oxide-based contacts for silicon heterojunction solar cells
| Autor: | Ivan Gordon, Jef Poortmans, Jinyoun Cho, Maria Recaman Payo, Jozef Szlufcik, Maarten Debucquoy, Rajiv Sharma, Hariharsudan Sivaramakrishnan Radhakrishnan, Arvid van der Heide |
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| Přispěvatelé: | Cho, Jinyoun, Radhakrishnan, Hariharsudan Sivaramakrishnan, SHARMA, Rajiv, Payo, Maria Recaman, Debucquoy, Maarten, VAN DER HEIDE, Arvid, GORDON, Ivan, Szlufcik, Jozef, POORTMANS, Jef |
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Technology
Materials science Fabrication Silicon Energy & Fuels Annealing (metallurgy) Materials Science Oxide chemistry.chemical_element RECOMBINATION Materials Science Multidisciplinary 02 engineering and technology 010402 general chemistry OXIDATION 01 natural sciences Physics Applied Annealing Metal chemistry.chemical_compound Passivating contact Atom Thermal stability Work function STACK TiOx Science & Technology MoOx Renewable Energy Sustainability and the Environment business.industry Physics Doping-free tells PERFORMANCE 021001 nanoscience & nanotechnology ELECTRON-SELECTIVE CONTACTS 0104 chemical sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry visual_art Physical Sciences visual_art.visual_art_medium Optoelectronics 0210 nano-technology business |
| Zdroj: | Article |
| Popis: | Metal oxides are interesting materials for use as carrier-selective contacts for the fabrication of doping-free silicon solar cells. In particular, MoOx and TiOx have been successfully used as hole and electron selective contacts in silicon solar cells, respectively. However, it is of paramount importance that good thermal stability is achieved in such contacts. In our work, we combined i-a-Si:H/MoOx based hole contacts with electron contacts featuring i-a-Si:H/TiOx/low work function metal (ATOM) to fabricate doping-free cells, termed MoIyATOM cells. We found that the thermal stability of the ATOM contact was improved when the i-a-Si:H was annealed (300 degrees C for 20 min in N-2) before depositing TiOx (Le. pre-TiOx annealing), which reduces the hydrogen content in i-a-Si:H by about 27 Vorei, and thereby the H-related degradation of the ATOM contact characteristics. Moreover, it was found that reducing the thickness of the low-work function metal on top of the TiOx enhanced the thermal stability of the ATOM contact. With these adaptations, the MoIyATOM cell efficiency was improved by 3.5 %(abs), with the highest efficiency of 17.6%. Moreover, the cells show improved thermal stability after the above-mentioned pre-TiOx annealing, which is confirmed by annealing tests at cell level as well as damp-heat tests at module level. The insights of this study could be used to tailor other metal-oxide based electron or hole contacts. The authors thank Praveen Dara and Johan Meersschaut for ERD measurement. Moreover, the authors gratefully acknowledge the financial support of imec's industrial affiliation program for Si-PV. The work in this paper was partially funded by the Kuwait Foundation for the Advancement of Sciences under project number CN18-15EE-01. Imec is a partner in EnergyVille (www.energyville.be), a collaboration between the Flemish research partners KU Leuven, VITO, imec, and UHasselt in the field of sustainable energy and intelligent energy systems. Cho, JY (reprint author), Katholieke Univ Leuven, ESAT Dept, Kasteelpk Arenberg 10, B-3001 Leuven, Belgium; Umicore, Watertorenstr 33, B-2250 Olen, Belgium. Radhakrishnan, HS (reprint author), IMEC, Kapeldreef 75, B-3001 Leuven, Belgium. jinyoun.cho@eu.umicore.be |
| Databáze: | OpenAIRE |
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