SPICE modelling of magnetic tunnel junctions written by spin-transfer torque
| Autor: | C. Baraduc, N. de Mestier, M. El Baraji, Guillaune Prenat, Virgile Javerliac, Bernard Dieny, Wei Guo |
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| Přispěvatelé: | SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), CROCUS Technology |
| Rok vydání: | 2010 |
| Předmět: |
Acoustics and Ultrasonics
Spice 02 engineering and technology Integrated circuit 01 natural sciences law.invention Computer Science::Hardware Architecture Computer Science::Emerging Technologies law 0103 physical sciences Hardware_INTEGRATEDCIRCUITS BSIM Electronics Hardware_ARITHMETICANDLOGICSTRUCTURES 010302 applied physics Physics Hardware_MEMORYSTRUCTURES Spintronics business.industry Transistor Electrical engineering Spin-transfer torque 021001 nanoscience & nanotechnology Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials CMOS Physical Sciences 0210 nano-technology business Hardware_LOGICDESIGN |
| Zdroj: | Journal of Physics D: Applied Physics Journal of Physics D: Applied Physics, IOP Publishing, 2010, 43 (21), pp.215001. ⟨10.1088/0022-3727/43/21/215001⟩ Journal of Physics D: Applied Physics, 2010, 43 (21), pp.215001. ⟨10.1088/0022-3727/43/21/215001⟩ |
| ISSN: | 1361-6463 0022-3727 |
| DOI: | 10.1088/0022-3727/43/21/215001 |
| Popis: | International audience; Spintronics aims at extending the possibility of conventional electronics by using not only the charge of the electron, but also its spin. The resulting spintronic devices, combining the front-end CMOS technology of electronics with a magnetic backend technology, employ Magnetic Tunnel Junctions (MTJs) as core elements. With the intent of simulating a circuit without fabricating it first, a reliable MTJ electrical model which is applicable to the standard SPICE (Simulation Program with Integrated Circuit Emphasis) simulator is required. Since such a model was lacking so far, we present an accurate MTJ SPICE model whose magnetic state is written by using the Spin-Transfer Torque (STT) effect. This model has been developed in C language and validated on the Cadence Virtuoso Platform with Spectre simulator. Its operation is similar to those of the standard BSIM (Berkeley Short-channel IGFET Model) SPICE model of the MOS transistor and fully compatible with the SPICE electrical simulator. In order to illustrate the model performance, we studied the tunneling conductance and STT-driven magnetization dynamics by comparing our simulation results with theoretical macrospin calculations and results found in the literature. |
| Databáze: | OpenAIRE |
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