Fabrication of graphene device and gate-voltage characterization
| Autor: | Hisao Miyazaki, Kazuhito Tsukagoshi |
|---|---|
| Rok vydání: | 2010 |
| Předmět: |
Fabrication
Materials science Graphene Transistor Nanotechnology Hardware_PERFORMANCEANDRELIABILITY General Chemistry Substrate (electronics) law.invention Hardware_GENERAL law Hardware_INTEGRATEDCIRCUITS General Materials Science AND gate Graphene nanoribbons Hardware_LOGICDESIGN Graphene oxide paper Voltage |
| Zdroj: | TANSO. 2010:110-115 |
| ISSN: | 1884-5495 0371-5345 |
| DOI: | 10.7209/tanso.2010.110 |
| Popis: | We present a review of our experiments on graphene transistors. For the preparation of graphene films on a substrate, a quick formation method is introduced in which the number of layers can be precisely confirmed. Fabrication of gate electrodes specialized for the graphene system is also explained for the application of a high electric field in the graphene transistor. In this short review paper, our original method of fabrication and structure of gate electrodes for the graphene transistor will be introduced. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|