Improvement of HRS Variability in OxRRAM by Tailored Metallic Liner

Autor:	N. Guillaume, M. Azzaz, S. Blonkowski, E. Jalaguier, P. Gonon, C. Vallée, T. Blomberg, M. Tuominen, H. Sprey, S. Bernasconi, C. Charpin-Nicolle, E. Nowak
Rok vydání:	2020
Předmět:	Condensed Matter - Materials Science Materials science Materials Science (cond-mat.mtrl-sci) FOS: Physical sciences Physics - Applied Physics Applied Physics (physics.app-ph) Composite material
DOI:	10.48550/arxiv.2010.12210
Popis:	In this work, we propose a novel integration in order to significantly reduce the High Resistance State vari-ability and to improve thermal stability in Oxide-based Resistive Random Access Memory (OxRRAM) devices. A novel device featuring a metallic liner, acting as a parallel resistance, is presented. To assess the effect of this solution, we compare the results with a standard OxRRAM cell structure. A very good stability of the resistive states, both in endurance and temperature, is highlighted and explained thanks to a conductive fila-ment based model. Comment: This paper is an accepted abstract to the conference SSDM that was held in Japan in september 2019
Databáze:	OpenAIRE
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