Interlayer tunneling spectroscopy of layered CDW materials
| Autor: | T. Fournier, S. Brazovski, Yu. I. Latyshev, Andrey Orlov, A. A. Sinchenko, E. Mossang, Pierre Monceau |
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| Přispěvatelé: | Kotelnikov Institute of Radio Engineering and Electronics (IRE), Russian Academy of Sciences [Moscow] (RAS), Centre de Recherches sur les Très Basses Températures (CRTBT), Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique de Grenoble (INPG)-Université Joseph Fourier - Grenoble 1 (UJF), Laboratoire de Physique Théorique et Modèles Statistiques (LPTMS), Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11), Moscow Engineering-Physics Institute, Laboratoire des champs magnétiques intenses (LCMI-GHMFL), Centre National de la Recherche Scientifique (CNRS) |
| Rok vydání: | 2005 |
| Předmět: |
[PHYS]Physics [physics]
Condensed matter physics Band gap Chemistry Scanning tunneling spectroscopy General Physics and Astronomy 02 engineering and technology Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology 01 natural sciences Magnetic field Tunnel effect Condensed Matter::Superconductivity 0103 physical sciences Density of states Condensed Matter::Strongly Correlated Electrons Metal–insulator transition 010306 general physics 0210 nano-technology Charge density wave Quantum tunnelling |
| Zdroj: | International Workshop on Electronic Crystals International Workshop on Electronic Crystals, 2005, Cargèse, France. pp.197-202, ⟨10.1051/jp4:2005131049⟩ |
| ISSN: | 1764-7177 1155-4339 |
| Popis: | International audience; We have measured intrinsic tunneling spectra of charge density wave (CDW) materials NbSe3 and o-TaS3 in sub-micron scale mesa structures. Beyond the interband tunneling across the CDW gap, , we observe intragap states at the voltage which we associate with creation of the amplitude soliton. The onset of the tunneling occurs only above a threshold voltage followed by a quasi-periodic staircase spectrum. We interpret that behavior as the CDW phase decoupling between neighboring layers via the formation of a grid of dislocation lines. In NbSe3, the application of a high magnetic field (up to 27 T) yields a strong suppression of the tunneling density of states within the CDW gap indicating a possible field induced metal-insulator transition. |
| Databáze: | OpenAIRE |
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