Raman scattering in InAs/AlGaAs quantum dot nanostructures
| Autor: | Giovanna Trevisi, M. Geddo, E. Giulotto, Paola Frigeri, Giorgio Guizzetti, M. S. Grandi, Luca Seravalli, S. Franchi |
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| Jazyk: | angličtina |
| Rok vydání: | 2011 |
| Předmět: |
68.65.-k Low-dimensional
Materials science 78.30.Fs III-V and II-VI semiconductors Physics and Astronomy (miscellaneous) Condensed matter physics Scattering Phonon 63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter::Materials Science symbols.namesake X-ray Raman scattering 78.67.Hc Quantum Dots Quantum dot symbols mesoscopic Raman spectroscopy Raman scattering Molecular beam epitaxy |
| Zdroj: | Applied physics letters 98 (2011): 111903-1. doi:10.1063/1.3567024 info:cnr-pdr/source/autori:E. Giulotto 1, M. Geddo 1, M. S. Grandi 1, G. Guizzetti 1, G. Trevisi 2, L. Seravalli 2, P. Frigeri 2 and S. Franchi 2/titolo:Raman scattering in InAs%2FAlGaAs quantum dot nanostructures/doi:10.1063%2F1.3567024/rivista:Applied physics letters/anno:2011/pagina_da:111903-1/pagina_a:/intervallo_pagine:111903-1/volume:98 |
| DOI: | 10.1063/1.3567024 |
| Popis: | We report on Raman scattering experiments on InAs/Al(x)Ga(1-x)As quantum dot heterostructures with 0 0, we detected several lines originating from the Al(x)Ga(1-x)As alloy. These can be related to scattering from GaAs-like and AlAs-like phonons with q congruent to 0, and weaker scattering from disorder-activated phonons with q not equal 0. In particular, we identified a line at similar to 250 cm(-1) as due to disorder-activated longitudinal optical phonons in the alloy. This conclusion is different than the attribution of this line to scattering from dots and, consequently, we do not recognize the possibility of deriving any information about the actual composition of the dots from an analysis of this line as proposed by other authors. |
| Databáze: | OpenAIRE |
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