Focused ion beam optical patterning of ta-C films
| Autor: | S. Kitova, Lothar Bischoff, L. Avramov, M. Sandulov, T. Tsvetkova, R. Boettger, M. Berova |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
3D optical data storage Materials science Focused ion beams Optical data storage Analytical chemistry 02 engineering and technology Surfaces and Interfaces General Chemistry Tetrahedral amorphous carbon 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Focused ion beam Surfaces Coatings and Films Ion Ion implantation Ion beam deposition Absorption edge X-ray photoelectron spectroscopy Transmission electron microscopy 0103 physical sciences Materials Chemistry 0210 nano-technology |
| Zdroj: | 19th International Conference on Surface Modification of Materials by Ion Beams (SMMIB-2015), 22.-27.11.2015, Chiang Mai, Thailand Surface & Coatings Technology 306(2016), 341-345 |
| ISSN: | 0257-8972 |
| DOI: | 10.1016/j.surfcoat.2016.07.088 |
| Popis: | Optical contrast formation by Ga+ ion implantation has been made use of for focused ion beam (FIB) writing of nano-scale optical patterns in tetrahedral amorphous carbon (ta-C). Initial UV-VIS optical spectroscopy results with Ga+ broad-beam ion implantation have shown well expressed ion beam induced photo-darkening effect in thin ta-C films. It is manifested by a significant shift of the optical absorption edge to lower photon energies as obtained from optical transmission measurements of ta-C samples, implanted with Ga+ at ion energy E = 20 keV and ion fluences D = 3e14 and 3e15 cm-2. This shift is accompanied by a considerable increase of the absorption coefficient (photo-darkening effect) in the measured photon energy range (0.5÷3.0 eV). The obtained optical contrast (between implanted and unimplanted film material) could be made use of in the area of high-density optical data storage using focused Ga+ ion beams. The underlying structural modifications, induced by the Ga+ ion bombardment, have been investigated by x-ray photo-electron spectroscopy (XPS), transmission (TEM) and scanning (SEM) electron microscopy measurements. Focused ion beam (FIB) implanted patterns in ta-C samples, obtained with a fluence of 5e15 cm-2, are also presented. |
| Databáze: | OpenAIRE |
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