TCAD Device Modeling and Simulation Study of Organic Field Effect Transistor-Based pH Sensor with Tunable Sensitivity for Surpassing Nernst Limit
| Autor: | Lubna Majeed, Syed Intekhab Amin, Zuber Rasool, Ishrat Bashir, Naveen Kumar, Sunny Anand |
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| Jazyk: | angličtina |
| Rok vydání: | 2023 |
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| Zdroj: | Electronics Volume 12 Issue 3 Pages: 536 |
| ISSN: | 2079-9292 |
| DOI: | 10.3390/electronics12030536 |
| Popis: | A dual-gate organic field effect transistor (DG-OFET)-based pH sensor is proposed that will be able to detect the variations in the aqueous (electrolyte) medium. In this structure, a source-sided underlap technique with a dual-gate sensing approach has been used. The change in ON-current (ION) was observed due to parallel examination of electrolytes in two gates underlapping the region of the structure. For the evaluation of the sensitivity of DG-OFET, the change in the drain current was exploited for different pH and corresponding charge densities utilizing 2D physics-based numerical simulation. The simulation results were extracted with the help of the software package Silvaco TCAD-ATLAS. The simulated results display that the proposed DG-OFET shows significantly higher sensitivity for high-k dielectrics. The voltage sensitivity achieved by DG-OFET with SiO2 as a dielectric in our work is 217.53 mV/pH which surpasses the Nernst Limit nearly four times. However, using a high-k dielectric (Ta2O5) increases it further to 555.284 mV/pH which is more than nine times the Nernst Limit. The DG-OFET pH sensor has a lot of potential in the future for various flexible sensing applications due to its flexibility, being highly sensitive, biocompatible and low-cost. |
| Databáze: | OpenAIRE |
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