Intrinsic quantized anomalous Hall effect in a moiré heterostructure
Autor: | Kenji Watanabe, T. Taniguchi, Jihang Zhu, Yi Zhang, Charles Tschirhart, Marec Serlin, Hryhoriy Polshyn, Leon Balents, Andrea Young |
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Rok vydání: | 2020 |
Předmět: |
Physics
Condensed Matter - Materials Science Multidisciplinary Condensed Matter - Mesoscale and Nanoscale Physics Condensed matter physics Band gap Quantum anomalous Hall effect Heterojunction 02 engineering and technology Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Polarization (waves) 01 natural sciences Condensed Matter - Strongly Correlated Electrons Quantization (physics) Hall effect 0103 physical sciences Curie temperature 010306 general physics 0210 nano-technology Bilayer graphene |
Zdroj: | Science. 367:900-903 |
ISSN: | 1095-9203 0036-8075 |
Popis: | We report the observation of a quantum anomalous Hall effect in twisted bilayer graphene showing Hall resistance quantized to within .1\% of the von Klitzing constant $h/e^2$ at zero magnetic field.The effect is driven by intrinsic strong correlations, which polarize the electron system into a single spin and valley resolved moir\'e miniband with Chern number $C=1$. In contrast to extrinsic, magnetically doped systems, the measured transport energy gap $\Delta/k_B\approx 27$~K is larger than the Curie temperature for magnetic ordering $T_C\approx 9$~K, and Hall quantization persists to temperatures of several Kelvin. Remarkably, we find that electrical currents as small as 1~nA can be used to controllably switch the magnetic order between states of opposite polarization, forming an electrically rewritable magnetic memory. Comment: Additional information available at www.afylab.com |
Databáze: | OpenAIRE |
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