Low temperature micro-photoluminescence spectroscopy of microstructures with InAsP/InP strained quantum wells
| Autor: | Erwine Pargon, S. Ghanad-Tavakoli, Camille Petit-Etienne, Jean-Pierre Landesman, Ray R. LaPierre, Juan Jiménez, N Isik-Goktas, Christophe Levallois |
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| Přispěvatelé: | Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Minatec, McMaster University [Hamilton, Ontario], Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Universidad de Valladolid [Valladolid] (UVa), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS), Renatech+ France, RGPAS-2018-522624, Natural Sciences and Engineering Research Council of Canada, VA283P18, MINECO, École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES) |
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Materials science
Acoustics and Ultrasonics micro-PL 02 engineering and technology 01 natural sciences [SPI]Engineering Sciences [physics] 0103 physical sciences Pozos cuánticos Reactive-ion etching [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics Spectroscopy Quantum well 010302 applied physics business.industry Micro-photoluminescence Micro-fotoluminiscencia 021001 nanoscience & nanotechnology Condensed Matter Physics Microstructure reactive ion etching Micro photoluminescence Surfaces Coatings and Films Electronic Optical and Magnetic Materials Quantum wells [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic Optoelectronics 0210 nano-technology business InAs x P 1−x /InP quantum wells |
| Zdroj: | Journal of Physics D: Applied Physics Journal of Physics D: Applied Physics, IOP Publishing, 2021, 54 (44), pp.445106. ⟨10.1088/1361-6463/ac1a33⟩ Journal of Physics D: Applied Physics, 2021, 54 (44), pp.445106. ⟨10.1088/1361-6463/ac1a33⟩ UVaDOC. Repositorio Documental de la Universidad de Valladolid instname |
| ISSN: | 0022-3727 1361-6463 |
| Popis: | Producción Científica Ridge microstructures were prepared by reactive ion etching (RIE) of a series of stacked InAsxP$_{1-x}$ quantum wells (QWs) with step graded compositions grown on InP by molecular beam epitaxy. These microstructures were characterized by low temperature micro-photoluminescence. The photoluminescence (PL) emission associated with each of the QWs was clearly identified and a model for their line shape was implemented. PL line-scans were measured across etched ridge stripes of various widths in an optical cryostat, with a spatial resolution of 1 µm. The model for the PL spectra allowed accurate extraction of the local PL integrated intensities, spectral positions and line widths. Two different RIE processes, using CH4/H2 and CH4/Cl2, were investigated. The PL line-scans showed strong variations of the integrated PL intensities across the etched stripes. The PL intensities for all QWs increased gradually from the edge to the center of the ridge microstructures, over a length scale of 10–20 µm. On the other hand, the spectral peak position of the PL lines remained constant (within an accuracy of 0.2–0.4 meV, depending on which QW was considered) across the microstructures. These observations are discussed in terms of the mechanical stress induced by the RIE processes, the relaxation of the biaxial built-in compressive stress in the InAsP QWs (induced by the free surfaces at the vertical etched sidewalls), and also by the non-radiative recombination at these sidewalls. Altogether, this study illustrates the contribution that specially designed test structures, coupled with advanced spectroscopic characterization, can provide to the development of semiconductor photonic devices (e.g. lasers or waveguides) involving RIE processing. Natural Sciences and Engineering Research Council of Canada (grants RGPIN-2018-04015 and RGPAS-2018-522624) Junta de Castilla y León (project VA283P18) Ministerio de Economía, Industria y Competitividad (project RTI2018-101020-B-I00) |
| Databáze: | OpenAIRE |
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