Dynamic modulation of the Fermi energy in suspended graphene backgated devices
| Autor: | U. Monteverde, James Sexton, Faisal H. Alqahtani, Omar M. Dawood, Rakesh K. Gupta, Hong-Yeol Kim, Max A. Migliorato, Robert J. Young, Mohamed Missous |
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| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Materials science
lcsh:Biotechnology 02 engineering and technology 010402 general chemistry Engineering and Structural Materials 01 natural sciences law.invention symbols.namesake 208 Sensors and actuators raman spectroscopy law 10 Engineering and Structural materials lcsh:TP248.13-248.65 104 Carbon and related materials 503 TEM STEM SEM lcsh:TA401-492 General Materials Science High electron Electronic properties atomic force microscopy Graphene Atomic force microscopy business.industry Fermi energy 505 Optical / Molecular spectroscopy suspended graphene 021001 nanoscience & nanotechnology 0104 chemical sciences 201 Electronics / Semiconductor / TCOs Dynamic modulation symbols Optoelectronics lcsh:Materials of engineering and construction. Mechanics of materials Current (fluid) 0210 nano-technology Raman spectroscopy business |
| Zdroj: | Migliorato, M, Monteverde, U, Dawood, O M D, Missous, M, Sexton, J, Kim, H Y, Alqahtani, F, Young, R & Kumar, R 2019, ' Dynamic modulation of the Fermi energy in suspended graphene backgated devices ', Science and Technology of Advanced Materials, vol. 20, no. 1, pp. 568-579 . https://doi.org/10.1080/14686996.2019.1612710 Science and Technology of Advanced Materials, Vol 20, Iss 1, Pp 568-579 (2019) Science and Technology of Advanced Materials |
| DOI: | 10.1080/14686996.2019.1612710 |
| Popis: | Freestanding (suspended) graphene films, with high electron mobility (up to ~200,000 cm2V−1s−1), good mechanical and electronic properties, could resolve many of the current issues that are hampering the upscaling of graphene technology. Thus far, attempts at reliably fabricating suspended graphene devices comprising metal contacts, have often been hampered by difficulties in exceeding sizes of 1 µm in diameter, if using UV lithography. In this work, area of suspended graphene large enough to be utilized in microelectronic devices, have been obtained by suspending a CVD graphene film over cavities, with top contacts defined through UV lithography with both wet and dry etching. An area of up to 160 µm2 can be fabricated as backgated devices. The suspended areas exhibit rippling of the surfaces which simultaneously introduces both tensile and compressive strain on the graphene film. Finally, the variations of the Fermi level in the suspended graphene areas can be modulated by applying a potential difference between the top contacts and the backgate. Having achieved large area suspended graphene, in a manner compatible with CMOS fabrication processes, together with enabling the modulation of the Fermi level, are substantial steps forward in demonstrating the potential of suspended graphene-based electronic devices and sensors. Graphical Abstract |
| Databáze: | OpenAIRE |
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