Optical constants of GaAs from 0.73 to 6.60 eV for dielectric film thickness metrology in compound semiconductor manufacturing

Autor: Stefan Zollner, D. Zarr
Předmět:
Zdroj: Scopus-Elsevier
Popis: This article describes the optical constants of GaAs from 0.73 to 6.60 eV determined using spectroscopic ellipsometry. Our setup includes a computer-controlled MgF/sub 2/ Berek waveplate compensator, which allows exact measurements of the ellipsometric angle /spl Delta/ below the band gap. Therefore, our data are very accurate over a broad range. We apply our results to determine thicknesses and optical properties of various dielectrics (SiO/sub 2/, silicon nitride, and sputtered AlN) on GaAs.
Databáze: OpenAIRE