A new simulation model for inhomogeneous Au/n-GaN structure
| Autor: | Nese Kavasoglu, A.S. Kavasoglu, Bengul Metin |
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| Přispěvatelé: | MÜ, Fen Fakültesi, Fizik Bölümü, Kavasoğlu, Neşe, Kavasoğlu, Abdulkadir Sertap, Metin, Bengül |
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Fabrication Open-circuit voltage Schottky diode 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Inhomogeneous Electronic Optical and Magnetic Materials Computational physics Electrical current 0103 physical sciences Homogeneity (physics) Hardware_INTEGRATEDCIRCUITS Fill factor 0210 nano-technology Device parameters |
| Popis: | WOS: 000376297500010 The larger the device area, the more difficult to carry on homogeneity during the fabrication and following treatments. Structural inhomogeneity may indicate themselves in variations in local electronic device parameters. Electrical current through the potential barriers is exponentially sensitive to the local device parameters and its fluctuations in the Schottky devices. A new simulation program is developed to describe a relation between multiple, random barrier heights and current-voltage characteristics of the Schottky device. We model the barrier height inhomogeneity in terms of random microcells connected in parallel, which have different barrier height values. Analyzing the integral of the simulated light current-voltage curves show that fluctuations of the local barrier height result in a degradation of the open circuit voltage, fill factor and in consequence, of the over all power conversation efficiency. The implementation described here is quite general and can be used to simulate any device parameter fluctuations in the Schottky devices. Mugla Sitki Kocman University Scientific Research Project (SRP)Mugla Sitki Kocman University [2011/13] This work was supported by Mugla Sitki Kocman University Scientific Research Project (SRP) with the project no. 2011/13. The authors wish to express appreciation to Mugla Sitki Kocman University Scientific Research Project. |
| Databáze: | OpenAIRE |
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