Dicing of composite substrate for thin film AlGaInP power LEDs by wet etching
| Autor: | Ray-Hua Horng, Chia Wei Tu, Shreekant Sinha, Hsiang An Feng, Fu Gow Tarntair |
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| Rok vydání: | 2020 |
| Předmět: |
Fabrication
Materials science Science Composite number 02 engineering and technology Substrate (electronics) 01 natural sciences Article law.invention Engineering Chemical engineering Etching (microfabrication) law 0103 physical sciences Thin film 010302 applied physics Multidisciplinary business.industry Delamination 021001 nanoscience & nanotechnology Medicine Optoelectronics Wafer dicing 0210 nano-technology business Light-emitting diode |
| Zdroj: | Scientific Reports Scientific Reports, Vol 11, Iss 1, Pp 1-7 (2021) |
| ISSN: | 2045-2322 |
| Popis: | In this paper, thin film AlGaInP LED chips with a 50 μm thick composite metal substrate (Copper-Invar-Copper; CIC) were obtained by the wet etching process. The pattern of the substrate was done by the backside of the AlGaInP LED/CIC. There was no delamination or cracking phenomenon of the LED epilayer which often occurs by laser or mechanical dicing. The chip area was 1140 μm × 1140 μm and the channel length was 360 μm. The structure of the CIC substrate was a sandwich structure and consisted of Cu as the top and bottom layers, with a thickness of 10 μm, respectively. The middle layer was Invar with a 30% to 70% ratio of Ni and Fe and a total thickness of 30 μm. The chip pattern was successfully obtained by the wet etching process. Concerning the device performance after etching, high-performance LED/CIC chips were obtained. They had a low leakage current, high output power and a low red shift phenomenon as operated at a high injected current. After the development and fabrication of the copper-based composite substrate for N-side up thin-film AlGaInP LED/CIC chips could be diced by wet etching. The superiority of wet etching process for the AlGaInP LED/CIC chips is over that of chips obtained by mechanical or laser dicing. |
| Databáze: | OpenAIRE |
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