Improvement of the Tolerated Raw Bit Error Rate in NAND Flash-based SSDs with Selective Refresh

Autor: Valentin Gherman, Luigi Dilillo, Emna Farjallah, Jean-Marc Armani
Přispěvatelé: Laboratoire Fiabilité et Intégration de Capteurs (LFIC), Département Métrologie Instrumentation & Information (DM2I), Laboratoire d'Intégration des Systèmes et des Technologies (LIST), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Laboratoire d'Intégration des Systèmes et des Technologies (LIST), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay, TEST (TEST), Laboratoire d'Informatique de Robotique et de Microélectronique de Montpellier (LIRMM), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), Laboratoire d'Intégration des Systèmes et des Technologies (LIST (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Laboratoire d'Intégration des Systèmes et des Technologies (LIST (CEA)), Test and dEpendability of microelectronic integrated SysTems (TEST), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)
Jazyk: angličtina
Rok vydání: 2019
Předmět:
Computer science
Real-time computing
Word error rate
NAND gate
02 engineering and technology
01 natural sciences
Flash memory
flash memory
0103 physical sciences
0202 electrical engineering
electronic engineering
information engineering
[PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det]
Electrical and Electronic Engineering
Data retention
Page
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Safety
Risk
Reliability and Quality
SSD
010302 applied physics
instrumentation
Hardware_MEMORYSTRUCTURES
business.industry
020208 electrical & electronic engineering
NAND flash
Condensed Matter Physics
Reliability
Atomic and Molecular Physics
and Optics
Surfaces
Coatings and Films
Electronic
Optical and Magnetic Materials
Adaptability
JEDEC memory standards
data storage time
Bit error rate
Computer data storage
business
Zdroj: Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2019, 96, pp.37-45. ⟨10.1016/j.microrel.2019.01.014⟩
Microelectronics Reliability, 2019, 96, pp.37-45. ⟨10.1016/j.microrel.2019.01.014⟩
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2019.01.014⟩
Popis: International audience; A recent large-scale study revealed that the uncorrectable bit error rates in data center solid-sate drives (SSDs) may fall far below the JEDEC standard recommendations. Here, a new refresh policy is proposed to improve the tolerated raw bit error rate (RBER) based on the observation that (a) a small ratio of SSD units may have a much higher RBER than the rest and (b) the RBER is dominated by the retention error rate. An approach is used to estimate the remaining retention time, i.e., the reliable data storage time, of flash memory pages. This estimation can be performed each time a memory page is read based on the number of detected retention errors and the elapsed time since data was programmed or refreshed. The fact that the estimated remaining retention time is smaller than a maximum time interval before the next page access is an indication that data needs to be refreshed. It is estimated that the tolerated retention RBER can be increased by up to 35× over a storage period of 3 years if the stored data are checked on a monthly basis and refreshed only if necessary. The proposed technique has the ability to adapt the average time between refresh operations to the actual RBER. Maximum refresh time reductions of about 12× are reported as compared to systematic refresh schemes.
Databáze: OpenAIRE
Externí odkaz: