Determination of the temperature dependency of the electrical parameters of CIGS solar cells
| Autor: | Miro Zeman, Zeger Vroon, A. Liakopoulou, Mirjam Theelen, Nicolas Barreau, F. Daume, Henk Steijvers, Vincent Hans |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
Soda-lime glass
Solar cells Temperature coefficient Open circuit voltage Materials science Electric network parameters Analytical chemistry 02 engineering and technology Temperature dependencies 01 natural sciences 0103 physical sciences Increasing temperatures Deposition (law) 010302 applied physics TS - Technical Sciences Industrial Innovation Renewable Energy Sustainability and the Environment Open-circuit voltage business.industry Electrical engineering Ion sensitive field effect transistors Electric fault currents 021001 nanoscience & nanotechnology Copper indium gallium selenide solar cells Temperature distribution Chemistry Temperature dependence TFT - Thin Film Technology Temperature values Nano Technology 0210 nano-technology business Current density Short circuit CIGS solar cells Polyimide Electrical parameter Ideality factors |
| Zdroj: | Journal of Renewable and Sustainable Energy, 2, 9 |
| Popis: | Two types of Cu(In,Ga)Se2 (CIGS) solar cells, both designed for implementation in CIGS modules, were subjected to temperatures between 25C and 105C. Simultaneous exposure to AM1.5 illumination allowed the measurement of their electrical parameters at these temperatures. These two types of solar cells, produced with different deposition routes on soda lime glass (SLG) and polyimide (PI) substrates, showed large variations in the temperature dependency of their electrical parameters. It was shown that the temperature dependency of the open circuit voltage (Voc) was dependent on its room temperature value: a high Voc at 25 °C led to a slower loss of Voc when the temperature was increased. For the Voc, the normalised temperature dependency varied between -0.28%/°C and -0.47%/°C, which is in agreement with the literature. The temperature dependency of the short circuit current density (Jsc) showed more surprising results: while the PI samples had the expected positive temperature dependency (0.03 to 0.32%/°C), the SLG samples showed a small negative impact of increasing temperature (-0.01 to -0.05%/°C). A correlation between the temperature dependencies of the Jsc and the ideality factor n was observed. Therefore, this difference in the temperature dependence of the Jsc could be caused by increased recombination for the SLG samples. Furthermore, the temperature coefficients of the fill factor (negative), efficiency (negative), and the series (slightly negative) and shunt (negative) resistances were calculated. |
| Databáze: | OpenAIRE |
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