Fabrication of GaInP/GaAs//Si Solar Cells by Surface Activated Direct Wafer Bonding
Autor: | Karen Derendorf, V. Klinger, Stephanie Essig, E. Oliva, Simon P. Philipps, Jan Benick, Michael Schachtner, Martin Hermle, Frank Dimroth, Wolfgang Jäger, Tobias Roesener, Gerald Siefer |
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Přispěvatelé: | Publica |
Rok vydání: | 2013 |
Předmět: |
heterojunctions
Fabrication Materials science semiconductor materials Silicon Wafer bonding chemistry.chemical_element bonding law.invention Gallium arsenide chemistry.chemical_compound Farbstoff Lattice constant law Solar cell III-V Epitaxie und Solarzellen Wafer Electrical and Electronic Engineering business.industry Alternative Photovoltaik-Technologien Solarzellen und Bauelemente Condensed Matter Physics Materialien - Solarzellen und Technologie Tandemsolarzellen auf kristallinem Silicium Electronic Optical and Magnetic Materials Amorphous solid solar cell chemistry III-V und Konzentrator-Photovoltaik Optoelectronics Organische und Neuartige Solarzellen business |
Zdroj: | IEEE Journal of Photovoltaics. 3:1423-1428 |
ISSN: | 2156-3403 2156-3381 |
DOI: | 10.1109/jphotov.2013.2273097 |
Popis: | GaInP/GaAs//Si solar cells with three active p-n junctions were fabricated by surface activated direct wafer bonding between GaAs and Si. The direct wafer bond is performed at room temperature and leads to a conductive and transparent interface. This allows the fabrication of high-efficiency monolithic tandem solar cells with active junctions in both Si and the III-V materials. This technology overcomes earlier challenges of III-V and Si integration caused by the large difference in lattice constant and thermal expansion. Transmission electron microscopy revealed a 5-nm thin amorphous interface layer formed by the argon fast atom beam treatment before bonding. No further defects or voids are detected in the photoactive layers. First triple-junction solar cell devices on Si reached an efficiency of 23.6% under concentrated illumination. |
Databáze: | OpenAIRE |
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