Fabrication of GaInP/GaAs//Si Solar Cells by Surface Activated Direct Wafer Bonding

Autor: Karen Derendorf, V. Klinger, Stephanie Essig, E. Oliva, Simon P. Philipps, Jan Benick, Michael Schachtner, Martin Hermle, Frank Dimroth, Wolfgang Jäger, Tobias Roesener, Gerald Siefer
Přispěvatelé: Publica
Rok vydání: 2013
Předmět:
Zdroj: IEEE Journal of Photovoltaics. 3:1423-1428
ISSN: 2156-3403
2156-3381
DOI: 10.1109/jphotov.2013.2273097
Popis: GaInP/GaAs//Si solar cells with three active p-n junctions were fabricated by surface activated direct wafer bonding between GaAs and Si. The direct wafer bond is performed at room temperature and leads to a conductive and transparent interface. This allows the fabrication of high-efficiency monolithic tandem solar cells with active junctions in both Si and the III-V materials. This technology overcomes earlier challenges of III-V and Si integration caused by the large difference in lattice constant and thermal expansion. Transmission electron microscopy revealed a 5-nm thin amorphous interface layer formed by the argon fast atom beam treatment before bonding. No further defects or voids are detected in the photoactive layers. First triple-junction solar cell devices on Si reached an efficiency of 23.6% under concentrated illumination.
Databáze: OpenAIRE