29GHz-bandwidth monolithically integrated EAM-VCSEL

Autor: Alexandre Rumeau, Ludovic Marigo-Lombart, Olivier Gauthier-Lafaye, Christophe Viallon, Guilhem Almuneau, Stephane Calvez, Antoine Monmayrant, Alexandre Arnoult, Hugo Thienpont, Krassimir Panajotov
Přispěvatelé: Équipe Photonique (LAAS-PHOTO), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Équipe Microondes et Opto-microondes pour Systèmes de Télécommunications (LAAS-MOST), Service Instrumentation Conception Caractérisation (LAAS-I2C), Service Techniques et Équipements Appliqués à la Microélectronique (LAAS-TEAM), Department of Applied Physics and Photonics [Brussels] (TONA), Vrije Universiteit Brussel (VUB), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Almuneau, Guilhem, Technology Transfer & Interface, Applied Physics and Photonics, Brussels Photonics Team, Vrije Universiteit Brussel [Bruxelles] (VUB)
Jazyk: angličtina
Rok vydání: 2019
Předmět:
Zdroj: The European Conference on Lasers and Electro-Optics (CLEO Europe) 2019
The European Conference on Lasers and Electro-Optics (CLEO Europe) 2019, Jun 2019, Munich, Germany. 2019
Workshop VCSEL Day 2019
Workshop VCSEL Day 2019, May 2019, Bruxelles, Belgium
HAL
2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)
2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC), Jun 2019, Munich, Germany. IEEE, pp.1-1, 2019, ⟨10.1109/cleoe-eqec.2019.8872590⟩
DOI: 10.1109/cleoe-eqec.2019.8872590⟩
Popis: International audience; The increase in modulation bandwidth of a vertical-cavity surface-emitting laser (VCSEL) can be achieved through the vertical integration of a modulator onto the laser. This approach has already been proposed and demonstrated to be competitive [1-3]. In this specific case, a double mesa structure with three contacts is needed to apply a high-frequency voltage signal to the modulator section and inject a CW current into the underlying VCSEL section. The middle contact serves as a shared ground. Indeed, splitting the emitting and the modulating parts circumvents the carrier dynamics limitation of the modulation bandwidth encountered in direct current-modulated VCSELs. However, the parasitic capacitances of the access line and contact pad play a significant role in the high-frequency limit of such a device. In this paper, we present the design, fabrication and modulation characteristics of an electro-absorption modulator (EAM) vertically-integrated onto an 850-nm VCSEL that is compatible with high-frequency operation. The two optical cavities are such that their mutual optical coupling is small to improve the modulation properties at high frequencies. This EAM-VCSEL device has been successfully fabricated by molecular beam epitaxy, followed by an original technological process [4]. In particular, planarized BCB layers and microstrip access lines have been implemented to optimize the high-frequency signal injection. Thanks to the optimized wavelength detuning between the cavities resonances of the EAM and the VCSEL and respectively to the quantum well absorption tail of the modulator, the EAM modulator exhibits a modulation depth of more than 40% within a 4V span. This vertically integrated EAM-VCSEL approach enables also to minimize the wavelength chirp during the modulation, which in our case is lower than 80 pm. Finally, 3-dB frequency bandwidths up to 29 GHz were measured on both stand-alone vertical EAM devices and vertically-integrated EAM-VCSELs. (a) (b)Fig. 1 (a) Schematics of the EAM-VCSEL structure under study with planarized BCB and (b) high-frequency modulation response of the EAM-VCSEL device with different DC bias voltages applied to the EAM.
Databáze: OpenAIRE
Externí odkaz: