Thermal stability of an InAlN/GaN heterostructure grown on silicon by metal-organic chemical vapor deposition
| Autor: | Dennis Christy, Joseph J. Freedsman, Yuya Urayama, Arata Watanabe, Takashi Egawa |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2015 |
| Předmět: |
Electron mobility
Materials science Silicon Annealing (metallurgy) Analytical chemistry General Physics and Astronomy chemistry.chemical_element Heterojunction High-electron-mobility transistor Chemical vapor deposition Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Barrier layer Condensed Matter::Materials Science chemistry Metalorganic vapour phase epitaxy |
| Zdroj: | Journal of Applied Physics. 118:235705 |
| ISSN: | 0021-8979 |
| Popis: | The thermal stabilities of metal-organic chemical vapor deposition-grown lattice-matched InAlN/GaN/Si heterostructures have been reported by using slower and faster growth rates for the InAlN barrier layer in particular. The temperature-dependent surface and two-dimensional electron gas (2-DEG) properties of these heterostructures were investigated by means of atomic force microscopy, photoluminescence excitation spectroscopy, and electrical characterization. Even at the annealing temperature of 850 °C, the InAlN layer grown with a slower growth rate exhibited a smooth surface morphology that resulted in excellent 2-DEG properties for the InAlN/GaN heterostructure. As a result, maximum values for the drain current density (IDS,max) and transconductance (gm,max) of 1.5 A/mm and 346 mS/mm, respectively, were achieved for the high-electron-mobility transistor (HEMT) fabricated on this heterostructure. The InAlN layer grown with a faster growth rate, however, exhibited degradation of the surface morphology at... |
| Databáze: | OpenAIRE |
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