Restricted Channel Migration in 2D Multilayer ReS2
| Autor: | Yeeun Kim, Youkyung Seo, Christoforos G. Theodorou, Chul Min Kim, Byung-Chul Lee, Yeonsu Kim, Min-Kyu Joo, Doyoon Kim, Moonsoo Sung, Gyu Tae Kim, Soo Yeon Kim |
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| Přispěvatelé: | Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA) |
| Rok vydání: | 2021 |
| Předmět: |
Electron mobility
Materials science Transconductance Oxide 02 engineering and technology Dielectric 010402 general chemistry 01 natural sciences law.invention Stress (mechanics) chemistry.chemical_compound law General Materials Science [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ComputingMilieux_MISCELLANEOUS business.industry 021001 nanoscience & nanotechnology Thermal conduction [SPI.TRON]Engineering Sciences [physics]/Electronics 0104 chemical sciences chemistry Optoelectronics Resistor 0210 nano-technology business [PHYS.PHYS.PHYS-DATA-AN]Physics [physics]/Physics [physics]/Data Analysis Statistics and Probability [physics.data-an] Communication channel |
| Zdroj: | ACS Applied Materials & Interfaces ACS Applied Materials & Interfaces, Washington, D.C. : American Chemical Society, 2021, 13 (16), pp.19016-19022. ⟨10.1021/acsami.1c02111⟩ |
| ISSN: | 1944-8252 1944-8244 |
| Popis: | When thickness-dependent carrier mobility is coupled with Thomas-Fermi screening and interlayer resistance effects in two-dimensional (2D) multilayer materials, a conducting channel migrates from the bottom surface to the top surface under electrostatic bias conditions. However, various factors including (i) insufficient carrier density, (ii) atomically thin material thickness, and (iii) numerous oxide traps/defects considerably limit our deep understanding of the carrier transport mechanism in 2D multilayer materials. Herein, we report the restricted conducting channel migration in 2D multilayer ReS2 after a constant voltage stress of gate dielectrics is applied. At a given gate bias condition, a gradual increase in the drain bias enables a sensitive change in the interlayer resistance of ReS2, leading to a modification of the shape of the transconductance curves, and consequently, demonstrates the conducting channel migration along the thickness of ReS2 before the stress. Meanwhile, this distinct conduction feature disappears after stress, indicating the formation of additional oxide trap sites inside the gate dielectrics that degrade the carrier mobility and eventually restrict the channel migration. Our theoretical and experimental study based on the resistor network model and Thomas-Fermi charge screening theory provides further insights into the origins of channel migration and restriction in 2D multilayer devices. |
| Databáze: | OpenAIRE |
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