Plasma-etched pattern transfer of sub-10 nm structures using a metal–organic resist and helium ion beam lithography
| Autor: | Grigore A. Timco, Richard E. P. Winpenny, Jarvis Li, Axel Scherer, Matthew S. Hunt, Hayden R. Alty, Stephen G. Yeates, Alex Wertheim, Scott M. Lewis, Lucia B. De Rose, Guy A. DeRose |
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| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Materials science
Silicon ResearchInstitutes_Networks_Beacons/photon_science_institute chemistry.chemical_element Bioengineering Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology Photon Science Institute Ion beam lithography Fin (extended surface) law.invention Computer Science::Emerging Technologies high dry etch resistance law Hardware_INTEGRATEDCIRCUITS General Materials Science helium ion beam lithography Nanoscopic scale Helium business.industry Mechanical Engineering Transistor General Chemistry Plasma Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Condensed Matter Physics high resolution pattern Resist chemistry metal-organic resist Optoelectronics ion beam resist 0210 nano-technology business Hardware_LOGICDESIGN |
| Zdroj: | Lewis, S M, Hunt, M, Derose, G, Alty, H, Li, J, Wertheim, A, Derose, L, Timco, G A, Scherer, A, Yeates, S G & Winpenny, R E P 2019, ' Plasma-etched pattern transfer of sub-10 nm structures using a metal–organic resist and helium ion beam lithography ', Nano Letters . https://doi.org/10.1021/acs.nanolett.9b01911 |
| DOI: | 10.1021/acs.nanolett.9b01911 |
| Popis: | Field-emission devices are promising candidates to replace silicon fin field-effect transistors as next-generation nanoelectronic components. For these devices to be adopted, nanoscale field emitters with nanoscale gaps between them need to be fabricated, requiring the transfer of, for example, sub-10 nm patterns with a sub-20 nm pitch to substrates like silicon and tungsten. New resist materials must therefore be developed that exhibit the properties of sub-10 nm resolution and high dry etch resistance. A negative tone, metal–organic resist is presented here. It can be patterned to produce sub-10 nm features when exposed to helium ion beam lithography at line doses on the order of tens of picocoulombs per centimeter. The resist was used to create 5 nm wide, continuous, discrete lines spaced on a 16 nm pitch in silicon and 6 nm wide lines on an 18 nm pitch in tungsten, with line edge roughness of 3 nm. After the lithographic exposure, the resist demonstrates high resistance to silicon and tungsten dry etch conditions (SF_6 and C_4F_8 plasma), allowing the pattern to be transferred to the underlying substrates. The resist’s etch selectivity for silicon and tungsten was measured to be 6.2:1 and 5.6:1, respectively; this allowed 3 to 4 nm thick resist films to yield structures that were 21 and 19 nm tall, respectively, while both maintained a sub-10 nm width on a sub-20 nm pitch. |
| Databáze: | OpenAIRE |
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