EFFECTS OF IRRADIATION ON TRIPLE AND SINGLE JUNCTION INGAP/GAAS/GE SOLAR CELLS
| Autor: | Campesato, R., Baur, C., Casale, M., Gervasi, M., Gombia, E., Greco, E., Kingma, A., Rancoita, P.G., Rozza, D., Tacconi, M. |
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| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
III-V-Based Devices for Terrestrial and Space Applications
Physics - Instrumentation and Detectors Gallium Arsenide Based cells FOS: Physical sciences Concentrator and Space Photovoltaics Instrumentation and Detectors (physics.ins-det) Astrophysics - Instrumentation and Methods for Astrophysics Radiation Damage Instrumentation and Methods for Astrophysics (astro-ph.IM) Multijunction Solar Cell |
| Zdroj: | 35th European PV Solar Energy Conference, pp. 959–964, Brussels, 24-28/09-2018 info:cnr-pdr/source/autori:Roberta Campesato; Carsten Baur; Mariacristina Casale; Massimo Gervasi; Enos Gombia; Erminio Greco; Aldo Kingma; P.G. Rancoita; Davide Rozza; Mauro Tacconi/congresso_nome:35th European PV Solar Energy Conference/congresso_luogo:Brussels/congresso_data:24-28%2F09-2018/anno:2018/pagina_da:959/pagina_a:964/intervallo_pagine:959–964 |
| Popis: | The investigation of the degradation effects on triple-junction (TJ) solar cells, operating in space environment, is of primary importance in view of future space missions towards harsh radiation orbits (e.g. MEO with high particle irradiation intensity) and for the new spacecraft based on electrical propulsion. In the present work, we report the experimental results obtained from the irradiation test campaign carried out both on (InGaP/GaAs/Ge) TJ solar cells and on single junction (SJ) isotype sub-cells (i.e. InGaP top cells, GaAs middle cells and Ge bottom cells). In particular, the electrical performances degradation of the irradiated samples was analyzed by means of the Displacement Damage Dose (DDD) method based on the NIEL (Non Ionizing Energy Loss) scaling hypothesis, with DDD doses computed by the SR-NIEL approach. By plotting the remaining factors as a function of the DDD, a single degradation curve for each sample type and for each electrical parameter has been found. The collapse of the remaining factors on a single curve has been achieved by selecting suitable displacement threshold energies, $E_d$, for NIEL calculation. Moreover, DLTS (Deep level Transient Spectroscopy) technique was used to better understand the nature of the defects produced by irradiation. DLTS measurements reveal a good correlation between defects introduced by irradiation inside the GaAs sub-cell and the calculated Displacement Damage Doses. Comment: To appear in the Proceedings of the 35th European PV Solar Energy Conference, Brussels, 24-28 September 2018 |
| Databáze: | OpenAIRE |
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