Impact of platinum contamination on ferroelectric memories
| Autor: | Nicolas Nagel, Werner Pamler, Lothar Frey, Thomas Mikolajick, Christine Dehm, Hocine Boubekeur, Heiner Ryssel, Anton J. Bauer |
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| Přispěvatelé: | Publica |
| Jazyk: | angličtina |
| Rok vydání: | 2001 |
| Předmět: |
Materials science
business.industry chemistry.chemical_element Time-dependent gate oxide breakdown Contamination Condensed Matter Physics Ferroelectricity Electronic Optical and Magnetic Materials law.invention Capacitor chemistry Control and Systems Engineering Getter Gate oxide law Materials Chemistry Ceramics and Composites Optoelectronics Wafer Electrical and Electronic Engineering business Platinum |
| Popis: | The impact of platinum contamination on the breakdown properties of gate oxide is reported. Wafers were intentionally contaminated with 1x10(13) to 4x10(14) at/cm(2) Pt after a 7.5 nm gate oxide growth, 300 nm poly-silicon deposition and subsequent phosphorus doping. Breakdown characteristics were evaluated using a voltage ramp method. The current-voltage curves of MOS capacitors show very few low field breakdown events, and the main field breakdown occurs at 12 MV/cm. If compared to clean wafers, platinum does not increase the defect density seriously, It is found from the E-Ramp results that platinum contamination up to 4x10(14) at/cm(2) does not have a pronounced effect on the gate oxide integrity if the contamination occurs after front-end-of-line processing of device fabrication. |
| Databáze: | OpenAIRE |
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