Direct Printing of Graphene Electrodes for High-Performance Organic Inverters
| Autor: | James J. Watkins, Özlem Usluer, Antonio Facchetti, Mark C. Hersam, Aditi Naik, Ethan B. Secor, Jae Joon Kim, D. Leonardo Gonzalez Arellano, Alejandro L. Briseno |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
Fabrication business.industry Graphene Transistor 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Flexible electronics 0104 chemical sciences law.invention chemistry.chemical_compound Semiconductor chemistry law Printed electronics Optoelectronics General Materials Science 0210 nano-technology business Rubrene Electronic circuit |
| Zdroj: | ACS applied materialsinterfaces. 10(18) |
| ISSN: | 1944-8252 |
| Popis: | Scalable fabrication of high-resolution electrodes and interconnects is necessary to enable advanced, high-performance, printed, and flexible electronics. Here, we demonstrate the direct printing of graphene patterns with feature widths from 300 μm to ∼310 nm by liquid-bridge-mediated nanotransfer molding. This solution-based technique enables residue-free printing of graphene patterns on a variety of substrates with surface energies between ∼43 and 73 mN m-1. Using printed graphene source and drain electrodes, high-performance organic field-effect transistors (OFETs) are fabricated with single-crystal rubrene (p-type) and fluorocarbon-substituted dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDIF-CN2) (n-type) semiconductors. Measured mobilities range from 2.1 to 0.2 cm2 V-1 s-1 for rubrene and from 0.6 to 0.1 cm2 V-1 s-1 for PDIF-CN2. Complementary inverter circuits are fabricated from these single-crystal OFETs with gains as high as ∼50. Finally, these high-resolution graphene patterns are compatible with scalable processing, offering compelling opportunities for inexpensive printed electronics with increased performance and integration density. |
| Databáze: | OpenAIRE |
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