Author response for 'Non-volatile Memory Storage in Tri-Layer Structures Using the Intrinsically Ferromagnetic Semiconductors GdN and DyN'

Autor: null Sam Devese, null Catherine Pot, null Franck Natali, null Simon Granville, null Natalie Plank, null Ben Ruck, null Harry Joseph Trodahl, null William Holmes-Hewett
Rok vydání: 2022
DOI: 10.1088/2632-959x/acaf92/v2/response1
Databáze: OpenAIRE