Benchtop Fabrication of Memristive Atomic Switch Networks

Autor: Masakazu Aono, Eric J. Sandouk, Henry O. Sillin, James K. Gimzewski, Adam Z. Stieg, Audrius V. Avizienis
Rok vydání: 2013
Předmět:
DOI: 10.48550/arxiv.1304.1243
Popis: Recent advances in nanoscale science and technology provide possibilities to directly self-assemble and integrate functional circuit elements within the wiring scheme of devices with potentially unique architectures. Electroionic resistive switching circuits comprising highly interconnected fractal electrodes and metal-insulator-metal interfaces, known as atomic switch networks, have been fabricated using simple benchtop techniques including solution-phase electroless deposition. These devices are shown to activate through a bias-induced forming step that produces the frequency dependent, nonlinear hysteretic switching expected for gapless-type atomic switches and memristors. By eliminating the need for complex lithographic methods, such an approach toward device fabrication provides a more accessible platform for the study of ionic resistive switches and memristive systems.
Comment: 8 pages, 8 figures
Databáze: OpenAIRE