Benchtop Fabrication of Memristive Atomic Switch Networks
Autor: | Masakazu Aono, Eric J. Sandouk, Henry O. Sillin, James K. Gimzewski, Adam Z. Stieg, Audrius V. Avizienis |
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Rok vydání: | 2013 |
Předmět: |
Condensed Matter - Materials Science
Resistive touchscreen Materials science Fabrication Biomedical Engineering Materials Science (cond-mat.mtrl-sci) FOS: Physical sciences Bioengineering Nanotechnology Electrical element General Chemistry Memristor Disordered Systems and Neural Networks (cond-mat.dis-nn) Condensed Matter - Disordered Systems and Neural Networks Condensed Matter Physics law.invention Nonlinear system law Electrode Hardware_INTEGRATEDCIRCUITS General Materials Science Lithography Electronic circuit |
DOI: | 10.48550/arxiv.1304.1243 |
Popis: | Recent advances in nanoscale science and technology provide possibilities to directly self-assemble and integrate functional circuit elements within the wiring scheme of devices with potentially unique architectures. Electroionic resistive switching circuits comprising highly interconnected fractal electrodes and metal-insulator-metal interfaces, known as atomic switch networks, have been fabricated using simple benchtop techniques including solution-phase electroless deposition. These devices are shown to activate through a bias-induced forming step that produces the frequency dependent, nonlinear hysteretic switching expected for gapless-type atomic switches and memristors. By eliminating the need for complex lithographic methods, such an approach toward device fabrication provides a more accessible platform for the study of ionic resistive switches and memristive systems. Comment: 8 pages, 8 figures |
Databáze: | OpenAIRE |
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