The Change Of Energy Gap And Efficiency Of Silicon Solar Cell When Doped By Some Elements

Autor: 1Gasmallah Hassan Hassab Allah, 2Mubarak Dirar Abdalla, 3Mohammed Saeed Daw Elbeit & 4Sawsan Ahmed Elhouri Ahmed
Rok vydání: 2017
Předmět:
DOI: 10.5281/zenodo.1116603
Popis: Silicon was doped with Mg, Al, S,Cu, Zn and Cd. For Mg, Al,S and Zn with atomic numbers 12, 13, 16 and 30 the efficiency decreases to be 0.0960, 0.0650, 0.0560, and 0.0280. This decrease of efficiency due to atomic number increase may be attributed to the fact that increase of atomic number decreases atomic and free charge density which decreases current and decreases efficiency. For Cu and Cd the increase of atomic number from 29 to 48 decreases the energy gap from 5.184 to 5.107 which is related to the fact that increase of atomic number increases atomic radius which decreases the energy gap. The decrease of energy gap increases the efficiency to change from 0.0090 to 0.069.
Databáze: OpenAIRE