A complete laboratory for transport studies of electron-hole interactions in GaAs/AlGaAs ambipolar bilayers
| Autor: | Ian Farrer, Ugo Siciliani de Cumis, J. Llandro, David A. Ritchie, J. Waldie, A. F. Croxall, Harvey E. Beere, Deepyanti Taneja |
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| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
Physics
Physics and Astronomy (miscellaneous) Condensed matter physics Ambipolar diffusion Exciton Bilayer 02 engineering and technology Electron Electron hole Quantum Hall effect 021001 nanoscience & nanotechnology Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 01 natural sciences Electrical resistivity and conductivity 0103 physical sciences Coulomb 010306 general physics 0210 nano-technology |
| ISSN: | 0003-6951 |
| Popis: | We present GaAs/AlGaAs double quantum well devices that can operate as both electron-hole (e-h) and hole-hole (h-h) bilayers, with separating barriers as narrow as 5 nm or 7.5 nm. With such narrow barriers, in the h-h configuration, we observe signs of magnetic-field-induced exciton condensation in the quantum Hall bilayer regime. In the same devices, we can study the zero-magnetic-field e-h and h-h bilayer states using Coulomb drag. Very strong e-h Coulomb drag resistivity (up to 10% of the single layer resistivity) is observed at liquid helium temperatures, but no definite signs of exciton condensation are seen in this case. Self-consistent calculations of the electron and hole wavefunctions show this might be because the average interlayer separation is larger in the e-h case than the h-h case. |
| Databáze: | OpenAIRE |
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