Simulations of CMOS pixel sensors with a small collection electrode, improved for a faster charge collection and increased radiation tolerance
| Autor: | Thanushan Kugathasan, M. Munker, Walter Snoeys, D. Dannheim, Petra Riedler, Amos Fenigstein, Heinz Pernegger, Tomer Leitner, M. Benoit |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Materials science
Physics - Instrumentation and Detectors Collection Time FOS: Physical sciences 01 natural sciences Capacitance 030218 nuclear medicine & medical imaging 03 medical and health sciences 0302 clinical medicine Hardware_GENERAL Electric field 0103 physical sciences Detectors and Experimental Techniques Instrumentation physics.ins-det Mathematical Physics Pixel 010308 nuclear & particles physics business.industry Process (computing) Instrumentation and Detectors (physics.ins-det) CMOS Electrode Optoelectronics business Technology CAD |
| Popis: | CMOS pixel sensors with a small collection electrode combine the advantages of a small sensor capacitance with the advantages of a fully monolithic design. The small sensor capacitance results in a large ratio of signal-to-noise and a low analogue power consumption, while the monolithic design reduces the material budget, cost and production effort. However, the low electric field in the pixel corners of such sensors results in an increased charge collection time, that makes a fully efficient operation after irradiation and a timing resolution in the order of nanoseconds challenging for pixel sizes larger than approximately forty micrometers. This paper presents the development of concepts of CMOS sensors with a small collection electrode to overcome these limitations, using three-dimensional Technology Computer Aided Design simulations. The studied design uses a 0.18 micrometer process implemented on a high-resistivity epitaxial layer. Proceedings of the PIXEL 2018 Workshop |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|