In-line metrology for characterization and control of extreme wafer thinning of bonded wafers
| Autor: | Andrew Cross, M. Stoerring, T. Vandeweyer, S. Hiebert, Shifang Li, J. De Vos, Andy Miller, G. Bast, Anne Jourdain, M. Liebens, Eric Beyne |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
0209 industrial biotechnology Interconnection Engineering drawing Materials science Process (computing) Mechanical engineering 02 engineering and technology Hardware_PERFORMANCEANDRELIABILITY Edge (geometry) Condensed Matter Physics 01 natural sciences Industrial and Manufacturing Engineering Electronic Optical and Magnetic Materials Characterization (materials science) Metrology Interferometry 020901 industrial engineering & automation 0103 physical sciences Hardware_INTEGRATEDCIRCUITS Wafer System on a chip Electrical and Electronic Engineering |
| Zdroj: | 2017 28th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC). |
| Popis: | Device packaging techniques continue to evolve. Modern packages connect components directly using different 3-D interconnect technologies. As the 3-D interconnect density is increasing exponentially, pitches need to reduce. Current interconnect technologies available in 3-D-Stacked IC devices do not offer such high densities. Parallel front-end of line wafer processing in combination with wafer-to-wafer bonding and extreme wafer thinning steps in the 3-D System on Chip integration technology schemes enable the increase of 3-D interconnect density. During the extreme wafer thinning process pathfinding and development, different thinning techniques were evaluated to target a final Si thickness specification. In this paper, metrology use cases that were applied in this pathfinding and development phase are demonstrated. Techniques, such as wafer level interferometry, wafer edge inspection and metrology, wafer front side metrospection, and wafer high resolution topography techniques were used to investigate process issues. Metrology data enabled us to determine where the extreme wafer thinning process could be improved. The same techniques were used to validate the improvements and to monitor process stability. |
| Databáze: | OpenAIRE |
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