Interconnect and substrate modeling and analysis: an overview
| Autor: | E. Chiprout |
|---|---|
| Rok vydání: | 2002 |
| Předmět: |
Interconnection
Hierarchy Silicon Computer science Semiconductor device modeling chemistry.chemical_element Integrated circuit design Substrate (printing) Metal interconnect Electric power transmission chemistry Transmission line Hardware_INTEGRATEDCIRCUITS Electronic engineering Equivalent circuit RLC circuit Integrated circuit packaging Electrical and Electronic Engineering Electronic circuit |
| Zdroj: | Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting. |
| DOI: | 10.1109/bipol.1997.647425 |
| Popis: | Accurate models for on-chip metal interconnect, silicon substrate, and packaging have become necessary for accurate simulation of high-performance ULSI circuits and high-speed RF designs. An overview of the hierarchy of techniques used to model and simulate these structures is given. While not an exhaustive summary, the purpose of the paper is to give the designer fundamental and practical understanding of principles used in modeling and analysis. The range of techniques from three-dimensional (3-D) modeling to quasi-3-D to transmission lines are analyzed, and their importance and impact are described. A modeling strategy that can include various kinds of modeling techniques and nonlinear devices in one simulation is also described. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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