Self-Shielded Topological Receiver Protectors
| Autor: | Henning Schomerus, Do Hyeok Jeon, Carsten Schindler, Ulrich Kuhl, Mattis Reisner, Fabrice Mortessagne, Tsampikos Kottos |
|---|---|
| Přispěvatelé: | Institut de Physique de Nice (INPHYNI), Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA)-Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA), Wesleyan University, Fachbereich Physik [Marburg], Philipps Universität Marburg, Department of Physics [Lancaster], Lancaster University |
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Materials science
Electrical breakdown FOS: Physical sciences General Physics and Astronomy Applied Physics (physics.app-ph) 02 engineering and technology 01 natural sciences law.invention law 0103 physical sciences Shielded cable Transmittance Electronics 010306 general physics ComputingMilieux_MISCELLANEOUS [PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall] Diode business.industry PIN diode Ranging Physics - Applied Physics 021001 nanoscience & nanotechnology Optoelectronics 0210 nano-technology business Microwave |
| Zdroj: | Physical Review Applied Physical Review Applied, American Physical Society, 2020, 13 (3), ⟨10.1103/PhysRevApplied.13.034067⟩ |
| ISSN: | 2331-7019 |
| DOI: | 10.1103/PhysRevApplied.13.034067 |
| Popis: | Receiver protectors (RPs) shield sensitive electronics from high-power incoming signals that might damage them. Typical RP schemes range from simple fusing and PIN diodes, to superconducting circuits and plasma cells - each having a variety of drawbacks ranging from unacceptable system downtime and self-destruction to significant insertion losses and power consumption. Here, we theoretically propose and experimentally demonstrate a unique self-shielding RP based on a coupled-resonator-microwave-waveguide (CRMW) with a topological defect being inductively coupled to a diode. This RP utilizes a charge-conjugation (C) symmetric resonant defect mode that is robust against disorder and demonstrates high transmittance at low incident powers. When incident power exceeds a critical value, a self-induced resonant trapping effect occurs leading to a dramatic suppression of transmittance and a simultaneous increase of the reflectance close to unity. The proposed RP device is self-protected from overheating and electrical breakdown and can be utilized in radars, reflection altimeters, and a broad range of communication systems. 9 pages, 4 figures |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|