| Autor: |
Alexandra Y. Tupchaya, Dimitry V. Gruznev, T.V. Utas, V.G. Kotlyar, A.N. Mihalyuk, Alexander A. Saranin, O.A. Utas, Andrey V. Zotov, Leonid V. Bondarenko |
| Rok vydání: |
2021 |
| Předmět: |
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| Zdroj: |
The Journal of Physical Chemistry Letters. 12:9584-9587 |
| ISSN: |
1948-7185 |
| DOI: |
10.1021/acs.jpclett.1c02523 |
| Popis: |
The atomic structure of the Si(100)2×3-Ag reconstruction has remained unknown for more than 25 years since its first observation with scanning tunneling microscopy, despite a relatively small unit cell and seeming abundance of the available experimental data. We propose a structural model of the Si(100)3×2-Ag reconstruction which comfortably fits all the principal experimental findings, including our own and those reported in the literature. The model incorporates 3 Si atoms and 4 Ag atoms per the 2 × 3 unit cell forming linear atomic chains along the 3aSi-periodic direction. A peculiar feature of the Si(100)2×3-Ag structure is the occurrence of the inner Si dimers in the second atomic layer from the top of the Si(100) substrate. The reconstruction is proved to possess semiconducting properties. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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