Phosphorous and Aluminum Implantation for MOSFET Manufacturing: Revisiting Implantation Dose Rate and Subsequent Surface Morphology
Autor: | Judith Woerle, Manuel Belanche, Marco Negri, Christopher Lamontagne, Filippo Bonafe, Roberta Nipoti, Ulrike Grossner |
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Jazyk: | angličtina |
Rok vydání: | 2022 |
Předmět: | |
Zdroj: | Materials Science Forum, 1062 |
ISSN: | 0255-5476 1662-9752 |
Popis: | In this work, we study the impact of the dose rate on the electrical properties of aluminum (p-body, p+-body-contact) and phosphorous (n-source/drain) implanted 4H-SiC. We find no significant differences for dose rates ranging from 1×1011 cm-2s-1 to 2−7×1012 cm-2s-1. AFM scans across implanted and non-implanted regions after thermal oxidation and subsequent oxide etching reveal a clear dependence of the oxidation rate on the conduction type and doping concentration. In addition, we observe an increasing (decreasing) oxidation rate for increasing doping concentrations of the n-type (p-type) ion implanted areas. Materials Science Forum, 1062 ISSN:0255-5476 ISSN:1662-9752 |
Databáze: | OpenAIRE |
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