Phosphorous and Aluminum Implantation for MOSFET Manufacturing: Revisiting Implantation Dose Rate and Subsequent Surface Morphology

Autor:	Judith Woerle, Manuel Belanche, Marco Negri, Christopher Lamontagne, Filippo Bonafe, Roberta Nipoti, Ulrike Grossner
Jazyk:	angličtina
Rok vydání:	2022
Předmět:	Thermal oxidation Ion implantation Mechanics of Materials Mechanical Engineering Resistivity Oxidation rate General Materials Science Condensed Matter Physics
Zdroj:	Materials Science Forum, 1062
ISSN:	0255-5476 1662-9752
Popis:	In this work, we study the impact of the dose rate on the electrical properties of aluminum (p-body, p+-body-contact) and phosphorous (n-source/drain) implanted 4H-SiC. We find no significant differences for dose rates ranging from 1×1011 cm-2s-1 to 2−7×1012 cm-2s-1. AFM scans across implanted and non-implanted regions after thermal oxidation and subsequent oxide etching reveal a clear dependence of the oxidation rate on the conduction type and doping concentration. In addition, we observe an increasing (decreasing) oxidation rate for increasing doping concentrations of the n-type (p-type) ion implanted areas. Materials Science Forum, 1062 ISSN:0255-5476 ISSN:1662-9752
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4f5cb0632b2dd19e72f6242edbf6ddd4 https://hdl.handle.net/20.500.11850/578552 Zobrazit plný text záznamu