A Parametric Technique for Trap Characterization in AlGaN/GaN HEMTs
| Autor: | Ali Soltani, Brahim Benbakhti, S. J. Duffy, K. Ahmeda, Hassane Ouazzani Chahdi, M. Boucherta, Karol Kalna, Nour Eddine Bourzgui, Weidong Zhang, M. Mattalah |
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| Přispěvatelé: | Liverpool John Morres University - LJMU (UK), Cardiff Metropolitan University, Swansea University, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université Saad Dahleb (ALGERIE), Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] (3IT), Université de Sherbrooke (UdeS), Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] (LN2), Université de Sherbrooke (UdeS)-École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université de Lyon-Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon) |
| Rok vydání: | 2020 |
| Předmět: |
TK
Algan gan 02 engineering and technology Trapping 01 natural sciences Degradation Transient analysis [SPI]Engineering Sciences [physics] 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Surface charge Electrical and Electronic Engineering ComputingMilieux_MISCELLANEOUS Parametric statistics 010302 applied physics Physics HEMTs Wide-bandgap semiconductor Time constant MODFETs Logic gates 020206 networking & telecommunications Charge (physics) Aluminum gallium nitride Wide band gap semiconductors Electronic Optical and Magnetic Materials Characterization (materials science) Atomic physics |
| Zdroj: | IEEE Transactions on Electron Devices IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2020, 67 (5), pp.1924-1930. ⟨10.1109/TED.2020.2980329⟩ IEEE Transactions on Electron Devices, 2020, 67 (5), pp.1924-1930. ⟨10.1109/TED.2020.2980329⟩ |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2020.2980329 |
| Popis: | International audience; A new parametric and cost-effective technique is developed to decouple the mechanisms behind current degradation in AlGaN/GaN high-electron mobility transistors (HEMTs) under a normal device operation: self-heating and charge trapping. Our unique approach investigates charge trapping using both source (IS) and drain (ID) transient currents for the first time. Two types of charge-trapping mechanisms are identified: 1) bulk charge trapping occurring on a timescale of less than 1 ms and 2) surface charge trapping with a time constant larger than a millisecond. Through monitoring the difference between IS and ID, a bulk charge-trapping time constant is found to be independent of both drain (V DS ) and gate (V GS ) biases. Surface charge trapping is found to have a much greater impact on slow degradation than bulk trapping and self-heating. At a short timescale (1 ms), the dynamic ON-resistance degradation is predominantly limited by surface charge trapping. |
| Databáze: | OpenAIRE |
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