Electrically active point defects in n-type 4H¿SiC
| Autor: | J. P. Doyle, Niklas Keskitalo, Margareta K. Linnarsson, Nils Nordell, Paolo Pellegrino, Bengt Gunnar Svensson, J. L. Lindström, Adolf Schöner |
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| Přispěvatelé: | Universitat de Barcelona |
| Rok vydání: | 1998 |
| Předmět: |
Electronic structure
Materials science Crystallography Condensed matter physics business.industry Cristal·lografia Wide-bandgap semiconductor General Physics and Astronomy Estructura electrònica Edge (geometry) Epitaxy Crystallographic defect Active point Cross section (physics) Semiconductor Position (vector) Atomic physics business |
| Zdroj: | Dipòsit Digital de la UB Universidad de Barcelona Recercat. Dipósit de la Recerca de Catalunya instname |
| Popis: | An electrically active defect has been observed at a level position of ∼ 0.70 eV below the conduction band edge (Ec) with an extrapolated capture cross section of ∼ 5×10−14 cm2 in epitaxial layers ... |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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