X-ray micro beam analysis of the photoresponse of an enlarged CVD diamond single crystal
| Autor: | R.S. Sussmann, L. Tozzetti, Giuseppe Cautero, M. Di Fraia, Sergio Carrato, Emanuele Pace, A. De Sio, Jocelyn Achard, Alexandre Tallaire, M. Antonelli, R.H. Menk |
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| Přispěvatelé: | A., De Sio, DI FRAIA, Michele, Antonelli, Matia, R. H., Menk, Cautero, Giuseppe, Carrato, Sergio, L., Tozzetti, J., Achard, A., Tallaire, R. S., Sussmann, E., Pace |
| Rok vydání: | 2013 |
| Předmět: |
Materials science
Material properties of diamond Synchrotron radiation Nanotechnology Chemical vapor deposition Substrate (electronics) engineering.material Particle detector Enlarged Diamond Materials Chemistry Diamond X-ray Detector single-crystal CVD diamond Electrical and Electronic Engineering Photoconduction propertie Diamond growth Diamond X-ray Detectors Photoconduction properties business.industry Mechanical Engineering Diamond General Chemistry Electronic Optical and Magnetic Materials engineering Optoelectronics business Layer (electronics) Single crystal |
| Zdroj: | Diamond and Related Materials. 34:36-40 |
| ISSN: | 0925-9635 |
| Popis: | article i nfo Diamond is one of the most promising materials for developing innovative electronic devices. Chemical va- pour deposition (CVD) homoepitaxial growth allows the synthesis of high quality single crystal diamond plates. However, the use of these crystals for electronic applications is hampered by their small area (typically of the order of 10 mm 2 ). Large areas are desired to ensure efficient particle or radiation detection with pixelated devices. By growing a thick CVD layer it is possible to enlarge the initial area of the substrate by a factor of 2 since growth also occurs laterally from the substrate. In this work, by using an X-ray collimated synchrotron radiation beam, the detection and charge collection properties of an enlarged CVD single-crystal diamond are used as a point-to-point probe to study the material quality. It was found that stress and dislocation density are correlated with the detection properties of the enlarged regions. The sensitivity of the device is affected by the vertical-to-lateral growth interface and the enlarged material quality seems to be correlated with the distance from this interface. |
| Databáze: | OpenAIRE |
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