Switching Dynamics of Ag-Based Filamentary Volatile Resistive Switching Devices—Part II: Mechanism and Modeling
| Autor: | Matteo Farronato, Elia Ambrosi, Daniele Ielmini, Caterina Sbandati, Alessandro Milozzi, Yu-Hsuan Lin, Wei Wang, Erika Covi |
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| Rok vydání: | 2021 |
| Předmět: |
Threshold voltage
Materials science Ionic bonding 02 engineering and technology 01 natural sciences Ion Mathematical model Electric field 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Electrical and Electronic Engineering Electrodes Ions 010302 applied physics Surface diffusion Data models 020206 networking & telecommunications surface diffusion Electronic Optical and Magnetic Materials Resistive random-access memory Chemical physics Voltage control Einstein relation ionic drift volatile memory Switches Voltage Volatile memory |
| Zdroj: | IEEE Transactions on Electron Devices. 68:4342-4349 |
| ISSN: | 1557-9646 0018-9383 |
| Popis: | Understanding the switching mechanism of the volatile resistive switching random access memory (RRAM) device is important to harness its characteristics and further enhance its performance. Accurate modeling of its dynamic behavior is also of deep value for its applications both as selector and as short-term memory synapse for future neuromorphic applications operating in temporal domain. In this work, we investigate the switching and retention (relaxation) processes of the Ag-based metallic filamentary volatile resistive switching devices. We find that the switching process can be modeled by the ionic drift under electric field, while the retention process can be modeled by the ionic diffusion along the filament surface driven by the gradient of surface atomic concentration. Through further theoretical analysis, we also find that the ionic drift and ionic diffusion can be unified within the general Einstein relation. To confirm this relation, we collect ionic mobility and diffusivity data from the literature using the switching and retention model. Finally, we show that the read voltage dependent retention time can be explained by the competition between the ionic drift and diffusion flux. |
| Databáze: | OpenAIRE |
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