Valence-band offsets in strained SiGeSn/Si layers with different tin contents
| Autor: | V. V. Murashov, Vyacheslav Timofeev, A. A. Bloshkin, A. R. Tuktamyshev, A. I. Nikiforov, A. I. Yakimov |
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| Přispěvatelé: | Bloshkin, A, Yakimov, A, Timofeev, V, Tuktamyshev, A, Nikiforov, A, Murashov, V |
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Binding energy Analytical chemistry chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Admittance spectroscopy Valence Band offset chemistry GeSiSn layer 0103 physical sciences Valence band Molecular Beam Epitaxy 0210 nano-technology Tin Quantum well |
| Zdroj: | Semiconductors. 51:329-334 |
| ISSN: | 1090-6479 1063-7826 |
| Popis: | Admittance spectroscopy is used to study hole states in Si0.7–yGe0.3Sny/Si quantum wells in the tin content range y = 0.04–0.1. It is found that the hole binding energy increases with tin content. The hole size-quantization energies in structures containing a pseudomorphic Si0.7–yGe0.3Sny layer in the Si matrix are determined using the 6-band kp method. The valence-band offset at the Si0.7–yGe0.3Sny heterointerface is determined by combining the numerical calculation results and experimental data. It is found that the dependence of the experimental values of the valence-band offsets between pseudomorphic Si0.7–yGe0.3Sny layers and Si on the tin content is described by the expression ΔEV exp = (0.21 ± 0.01) + (3.35 ± 7.8 × 10–4)y eV. |
| Databáze: | OpenAIRE |
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