| Autor: |
Bandler, J.W., Biernacki, R.M., Chen, S.H. |
| Jazyk: |
italština |
| Rok vydání: |
1997 |
| Předmět: |
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| Zdroj: |
Bandler, J.W. ; Biernacki, R.M. ; Chen, S.H. (1997) Mixed-domain multi-simulator statistical device modeling and yiel-driven design. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy. |
| Popis: |
We present mixed-domain, multi-simulator approaches to device modeling and yield-driven optimization. Intelligent computational interfaces combine and enhance the features of otherwise disjoint simulators. Time-domain, frequency-domain and electromagnetic simulations are integrated for efficient statistical modeling and design with mixed-domain specifications. Our approach is demonstrated by statistical modeling of GaAs MESFETs and yield optimization using, simultaneously, SPICE device models, Sonnet's electromagnetic simulator em and OSA's design optimization system OSA90/hope. Space Mapping optimization aligns mode-matching and finite element based electromagnetic simulations. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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