Non-volatile ionic modification of the Dzyaloshinskii Moriya Interaction

Autor: Andrew D. Kent, Stefania Pizzini, M. Salah El Hadri, Yves Roussigné, Axel Laborieux, Alessio Lamperti, Andrey Stashkevich, Y. Liu, Shimpei Ono, Brian B. Maranville, Jürgen Langer, Damien Querlioz, J. B. Mohammedi, Dafiné Ravelosona, E. Arenholtz, Eric E. Fullerton, Eduardo Martínez, Berthold Ocker, Luis Sánchez-Tejerina, L. Herrera Diez, Jan Vogel, Robert Tolley, Dustin A. Gilbert, Alexander J. Grutter, M. Belmeguenai, Patrick Quarterman, S. M. Chérif
Přispěvatelé: Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Chrono-environnement - CNRS - UBFC (UMR 6249) (LCE), Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC), Laboratoire des Sciences des Procédés et des Matériaux (LSPM), Centre National de la Recherche Scientifique (CNRS)-Université Sorbonne Paris Cité (USPC)-Institut Galilée-Université Paris 13 (UP13), Micro et NanoMagnétisme (MNM ), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratorio MDM (IMM-CNR), Consiglio Nazionale delle Ricerche [Roma] (CNR), New York University [New York] (NYU), NYU System (NYU), National Institute of Standards and Technology [Gaithersburg] (NIST), Advanced Light Source [LBNL Berkeley] (ALS), Lawrence Berkeley National Laboratory [Berkeley] (LBNL), Central Research Institute of Electric Power Industry, Center for Memory and Recording Research, University of California [San Diego] (UC San Diego), University of California-University of California, University of California, Universidad de Valladolid [Valladolid] (UVa), Singulus technology AG, ANR-16-CE24-0018,ELECSPIN,Dispositifs Spintronique assistés par champ électrique(2016), Laboratoire Chrono-environnement (UMR 6249) (LCE), Université Paris 13 (UP13)-Institut Galilée-Université Sorbonne Paris Cité (USPC)-Centre National de la Recherche Scientifique (CNRS), Micro et NanoMagnétisme (NEEL - MNM), National Research Council of Italy | Consiglio Nazionale delle Ricerche (CNR), University of California (UC)-University of California (UC), University of California (UC)
Jazyk: angličtina
Rok vydání: 2019
Předmět:
Zdroj: Physical Review Applied
Physical Review Applied, American Physical Society, 2019, 12 (3), pp.034005. ⟨10.1103/PhysRevApplied.12.034005⟩
Physical Review Applied, 2019, 12 (3), pp.034005. ⟨10.1103/PhysRevApplied.12.034005⟩
Physical Review Applied 12 (2019). doi:10.1103/PhysRevApplied.12.034005
info:cnr-pdr/source/autori:Diez, L. Herrera; Liu, Y. T.; Gilbert, D. A.; Belmeguenai, M.; Vogel, J.; Pizzini, S.; Martinez, E.; Lamperti, A.; Mohammedi, J. B.; Laborieux, A.; Roussigne, Y.; Grutter, A. J.; Arenholtz, E.; Quarterman, P.; Maranville, B.; Ono, S.; El Hadri, M. Salah; Tolley, R.; Fullerton, E. E.; Sanchez-Tejerina, L.; Stashkevich, A.; Cherif, S. M.; Kent, A. D.; Querlioz, D.; Langer, J.; Ocker, B.; Ravelosona, D./titolo:Nonvolatile Ionic Modification of the Dzyaloshinskii-Moriya Interaction/doi:10.1103%2FPhysRevApplied.12.034005/rivista:Physical Review Applied/anno:2019/pagina_da:/pagina_a:/intervallo_pagine:/volume:12
ISSN: 2331-7019
DOI: 10.1103/PhysRevApplied.12.034005⟩
Popis: International audience; The possibility to tune the Dzyaloshinskii Moriya interaction (DMI) by electric (E) field gating in ultra-thin magnetic materials has opened new perspectives in terms of controlling the stabilization of chiral spin structures. Most recent efforts have used voltage-induced charge redistribution at the interface between a metal and an oxide to modulate DMI. This approach is attractive for active devices but it tends to be volatile, making it energy demanding, and it is limited by Coulomb screening in the metal. Here we have demonstrated the non-volatile E-field manipulation of DMI by ionic liquid gating of Pt/Co/HfO2 ultra-thin films. The E-field effect on DMI scales with the E-field exposure time and is proposed to be linked to the migration and subsequent anchoring of oxygen species from the HfO2 layer into the Co and Pt layers. This effect permanently changes the properties of the material showing that E-fields can not only be used for local gating in devices but also as a highly scalable materials design tool for post-growth tuning of DMI.
Databáze: OpenAIRE