Randomization of heavily damaged regions in annealed low energy Ge(+)-implanted (001)Si
| Autor: | Y. Liou, Lun-Lun Chen, H.C. Chien, W. C. Chen, S.L. Cheng, H. H. Lin |
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| Rok vydání: | 2003 |
| Předmět: |
Materials science
Condensed matter physics Annealing (metallurgy) Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Amorphous solid Crystallography Low energy Ion implantation Si substrate Transmission electron microscopy Shallow junction High-resolution transmission electron microscopy Instrumentation |
| Zdroj: | Ultramicroscopy. 98(2-4) |
| ISSN: | 0304-3991 |
| Popis: | Apparent growth of amorphous layers during low temperature annealing was observed in low energy Ge(+)-implanted (001)Si by high-resolution transmission electron microscopy. The occurrence of abnormal growth is due to the randomization of heavily damaged regions beneath the original amorphous/crystalline interfaces. The randomization process is attributed to the strain, incurred by the presence of a high density of large Ge atoms in the heavily damaged Si substrate, relaxation to lower the free energy of the systems. The randomization upon annealing may be fruitfully applied to minimize the transient enhanced diffusion in shallow junction formation. |
| Databáze: | OpenAIRE |
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