Accurate electro-optical characterization of high power density GaAs-based laser diodes for screening strategies improvement
| Autor: | Mauro Bettiati, Pamela del Vecchio, Yannick Deshayes, François Laruelle, Laurent Bechou, Simon Joly |
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| Přispěvatelé: | 3S Photonics, Laboratoire Ondes et Matière d'Aquitaine (LOMA), Université de Bordeaux (UB)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de l'intégration, du matériau au système (IMS), Université Sciences et Technologies - Bordeaux 1-Institut Polytechnique de Bordeaux-Centre National de la Recherche Scientifique (CNRS), Joly, Simon |
| Jazyk: | angličtina |
| Rok vydání: | 2014 |
| Předmět: |
Materials science
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic [SPI] Engineering Sciences [physics] Gallium nitride 02 engineering and technology 01 natural sciences Semiconductor laser theory law.invention chemistry.chemical_compound law 0103 physical sciences Breakdown voltage [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ComputingMilieux_MISCELLANEOUS Diode 010302 applied physics [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics] business.industry High voltage 021001 nanoscience & nanotechnology Laser chemistry [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic Degree of polarization Optoelectronics 0210 nano-technology business Light-emitting diode |
| Zdroj: | Accurate electro-optical characterization of high power density GaAs-based laser diodes for screening strategies improvement SPIE Photonics Europe 2014: Photonics, Optics, Lasers, Micro-and Nanotechnologies SPIE Photonics Europe 2014: Photonics, Optics, Lasers, Micro-and Nanotechnologies, Apr 2014, Brussels, Belgium. pp.9134:913423, ⟨10.1117/12.2052179⟩ |
| Popis: | International audience; In this study, we report on a methodology based on reverse and forward current-voltage curves (I-V) and on Degree of Polarization (DoP) of electroluminescence measurements on 980 nm laser diodes chip-on-submount (CoS) for the improvement of screening tests. Current-voltage curves are performed at reverse bias up to breakdown voltage (VBR) using both a high current accuracy (< 1 pA) and high voltage resolution (< 10 mV) at different submount-temperatures (20-50°C). The DoP of luminescence of such devices, related to strains in materials and effect of shear strain on the birefringence, is calculated from the simultaneous measurement of TE (LTE) and TM (LTM) polarized light emissions. We observe that application of high reverse voltages occasionally produces significant micro-plasma (MP) pre-breakdown on reverse I-V characteristics as recently observed in InGaN/GaN LEDs and assumed to be a response of electrically active defects. Comparisons between breakdown voltages and number of MP, and changes of leakage current at low forward voltage (< 0.1 V) are considered. DoP measurements are also analyzed versus temperature. Finally the usefulness of these measurements for effective screening of devices is discussed. |
| Databáze: | OpenAIRE |
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