A Visible and Near-IR Tunnel Photosensor with a Nanoscale Metal Emitter: The Effect of Matching of Hot Electrons Localization Zones and a Strong Electrostatic Field
| Autor: | Sergey V. Zarkov, Nikolay P. Aban'shin, Yuri A. Avetisyan, Alexander N. Yakunin, S. S. Volchkov, Alexander P. Loginov, S. A. Yuvchenko, Dmitry A. Zimnyakov, Garif G. Akchurin |
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| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Materials science
vacuum photosensor Schottky barrier Photodetector 02 engineering and technology 01 natural sciences 010309 optics Planar Ballistic conduction Electric field 0103 physical sciences General Materials Science Instrumentation wavelength dependence Common emitter Fluid Flow and Transfer Processes business.industry Process Chemistry and Technology General Engineering Photoelectric effect 021001 nanoscience & nanotechnology Computer Science Applications Wavelength tunnel photo emission Optoelectronics 0210 nano-technology business quantum yield hot electrons |
| Zdroj: | Applied Sciences Volume 9 Issue 24 |
| ISSN: | 2076-3417 |
| DOI: | 10.3390/app9245356 |
| Popis: | The results of the research and design of a novel vacuum photosensor with a planar molybdenum blade structure are presented. The advanced prototype implements the principle of an increasing penetrability of the Schottky barrier for the metal&ndash vacuum interfaces under the action of an external strong electrostatic field. Theoretical and experimental substantiation of the photosensor performance in a wide range of wavelengths (from 430 to 680 nm and from 800 to 1064 nm) beyond the threshold of the classical photoelectric effect is given. The finite element method was applied to calculate distribution of the optical and electrostatic fields inside the photosensor structure. The sensor current-to-light response was studied using the periodic pulsed irradiation with the tunable wavelength. It was shown that the nanoscale localization zones of two types are formed near the surface of the blade tip: the zone of an increased concentration of hot electrons localized inside the molybdenum blade, and the zone with an increased strength of the external electrostatic field localized outside the blade. In general, the mutual positions of these zones may not coincide, whereas the position of the first-type localization zone significantly varies with the changes in the wavelength of the irradiating light. This causes features in the spectrum of the quantum yield of the photosensor such as expressed non-monotonic behavior and occurrence of sharp dips. The design of the photosensor that provides matching of the positions for both types of localization zones was proposed the manufactured prototypes of the designed device were experimentally studied. In the designed photosensor, the ballistic transport of photoelectrons in the vacuum gap with a strong field provides a possibility for the creation of ultra-fast optoelectronic devices, such as modulators, detectors, and generators. |
| Databáze: | OpenAIRE |
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