Sensitivity of NOR Flash memories to wide-energy spectrum neutrons during accelerated tests

Autor:	Christopher D. Frost, Simone Gerardin, Luca Chiavarone, Marcello Calabrese, Alessandro Paccagnella, Marta Bagatin, Angelo Visconti
Rok vydání:	2014
Předmět:	reliability Materials science business.industry NAND gate Floating gate memories soft error Threshold voltage Flash (photography) Energy spectrum Electronic engineering Optoelectronics Neutron Irradiation Sensitivity (control systems) business
Zdroj:	2014 IEEE International Reliability Physics Symposium.
Popis:	We study the effects of exposure to accelerated neutron beams of Floating Gate (FG) Flash memories with NOR architecture. Error rates as well as threshold voltage shifts are examined and mechanisms are discussed. A comparison with NAND Flash memories, with both multi-level and single-level cell architecture, is performed. In addition to prompt effects, retention of irradiated cells is analyzed for several months after irradiation. Thanks to tail distributions, we can assess possible rare events.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4e099cba329f16fc0a1953ba1c1d6d63 https://doi.org/10.1109/irps.2014.6861094 Zobrazit plný text záznamu