Feasibility studies of microelectrode silicon detectors with integrated electronics
| Autor: | G. U. Pignatel, Francesco Svelto, Nicola Zorzi, F. Sandrelli, M. Carpinelli, Valerio Re, G. Batignani, Massimo Manghisoni, S. Bettarini, S. Dittongo, Matteo Rama, F. Forti, A. Lusiani, V. Speziali, L. Bosisio, Lodovico Ratti, Maurizio Boscardin, Mario Giorgi, G.-F. Dalla Betta, P. Gregori |
|---|---|
| Přispěvatelé: | Dalla Betta, G, Batignani, G, Bettarini, S, Boscardin, M, Bosisio, L, Carpinelli, M, Dittongo, S, Forti, F, Giorgi, M, Gregori, P, Lusiani, A, Manghisoni, M, Pignatel, G, Rama, M, Ratti, L, Re, V, Sandrelli, F, Speziali, V, Svelto, F, Zorzi, N, DALLA BETTA, G. F., Batignani, G., Bettarini, S., Boscardin, M., Bosisio, Luciano, Carpinelli, M., Dittongo, S., Forti, F., Giorgi, G., Gregori, P., Lusiani, A., Manghisoni, M., Pignatel, G. U., Rama, M., Ratti, L., Re, V., Sandrelli, F., Speziali, V., Svelto, F., Zorzi, N. |
| Rok vydání: | 2002 |
| Předmět: |
Physics
Nuclear and High Energy Physics Fabrication Silicon Electrical characterisation Fabrication technology business.industry Transistor Bipolar junction transistor Detector Biopolar transistor Process (computing) chemistry.chemical_element JFET law.invention Microelectrode chemistry Silicon microstrip detector law Hardware_INTEGRATEDCIRCUITS Optoelectronics Field-effect device business Instrumentation |
| Zdroj: | Fondazione Bruno Kessler-IRIS |
| ISSN: | 0168-9002 |
| DOI: | 10.1016/s0168-9002(01)01777-6 |
| Popis: | We describe our experience on design and fabrication, on high-resistivity silicon substrates, of microstrip detectors and integrated electronics, devoted to high-energy physics experiments and medical/industrial imaging applications. We report on the full program of our collaboration, with particular regards to the tuning of a new fabrication process, allowing for the production of good quality transistors, while keeping under control the basic detector parameters, such as leakage current. Experimental results on JFET and bipolar transistors are presented, and a microstrip detector with an integrated JFET in source–follower configuration is introduced. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect