Feasibility studies of microelectrode silicon detectors with integrated electronics

Autor: G. U. Pignatel, Francesco Svelto, Nicola Zorzi, F. Sandrelli, M. Carpinelli, Valerio Re, G. Batignani, Massimo Manghisoni, S. Bettarini, S. Dittongo, Matteo Rama, F. Forti, A. Lusiani, V. Speziali, L. Bosisio, Lodovico Ratti, Maurizio Boscardin, Mario Giorgi, G.-F. Dalla Betta, P. Gregori
Přispěvatelé: Dalla Betta, G, Batignani, G, Bettarini, S, Boscardin, M, Bosisio, L, Carpinelli, M, Dittongo, S, Forti, F, Giorgi, M, Gregori, P, Lusiani, A, Manghisoni, M, Pignatel, G, Rama, M, Ratti, L, Re, V, Sandrelli, F, Speziali, V, Svelto, F, Zorzi, N, DALLA BETTA, G. F., Batignani, G., Bettarini, S., Boscardin, M., Bosisio, Luciano, Carpinelli, M., Dittongo, S., Forti, F., Giorgi, G., Gregori, P., Lusiani, A., Manghisoni, M., Pignatel, G. U., Rama, M., Ratti, L., Re, V., Sandrelli, F., Speziali, V., Svelto, F., Zorzi, N.
Rok vydání: 2002
Předmět:
Zdroj: Fondazione Bruno Kessler-IRIS
ISSN: 0168-9002
Popis: We describe our experience on design and fabrication, on high-resistivity silicon substrates, of microstrip detectors and integrated electronics, devoted to high-energy physics experiments and medical/industrial imaging applications. We report on the full program of our collaboration, with particular regards to the tuning of a new fabrication process, allowing for the production of good quality transistors, while keeping under control the basic detector parameters, such as leakage current. Experimental results on JFET and bipolar transistors are presented, and a microstrip detector with an integrated JFET in source–follower configuration is introduced.
Databáze: OpenAIRE