A combined physicochemical-microstructural approach to predict the crack path at the topside interconnections in IGBT power devices
| Autor: | M. Shqair, Z. Khatir, A. Ibrahim, M. Berkani, A. Halouani, T. Hamieh |
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| Přispěvatelé: | Maastricht Science Programme, RS: FSE MSP |
| Jazyk: | angličtina |
| Rok vydání: | 2022 |
| Předmět: |
HARDNESS
Crack propagation Semiconductor ALUMINUM Condensed Matter Physics FATIGUE Atomic and Molecular Physics and Optics EVOLUTION Surfaces Coatings and Films Electronic Optical and Magnetic Materials Physicochemical-microstructural STRENGTH Critical stress MODULES Electrical and Electronic Engineering Safety Risk Reliability and Quality SURFACE-ENERGY Critical energy |
| Zdroj: | Microelectronics Reliability, 132:114516. Elsevier Limited |
| ISSN: | 0026-2714 |
| Popis: | The thermal fatigue of the bond-wire contacts at the topside interconnections of power electronic devices is one of the main reliability issues. This paper presents a new methodological approach to characterize and model the damages during aging by a combination of fracture mechanics and physicochemical approaches. The approach relies first on correlating the change of the microstructure with aging at the bond-wire contact, then on looking for possible links between the microstructure and the parameters of damage models. After reviewing the effect of the microstructure on the whole cycling process, the correlation is made by relating the driving force of the device failure which is the crack propagation to some physicochemical properties and microstructural parameters such as surface energy (gamma(s)), grain boundary energy (gamma(gb)), misorientation angle between neighbor grains (delta theta), plane of orientation of each singular grain, grain size and hardness values (H). This requires EBSD analysis and some post treatments. Those relationships were then used to configure the effect of the microstructure on cracks passage at the interconnection interfaces using cohesive zone models (CZM). |
| Databáze: | OpenAIRE |
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