Band Diagrams and Trap Distributions in Metal-SiO2-SiC(3C) Structures with Different Metal Gates
| Autor: | H. M. Przewlocki, Tomasz Gutt, Mietek Bakowski, Krzysztof Piskorski |
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| Rok vydání: | 2013 |
| Předmět: | |
| Zdroj: | ECS Transactions. 50:231-242 |
| ISSN: | 1938-6737 1938-5862 |
| DOI: | 10.1149/05003.0231ecst |
| Popis: | Cubic silicon carbide (3C-SiC) is a promising material for medium and high power field effect transistors, due to higher than in other SiC polytypes inversion layer mobility [1]. The purpose of this work was to characterize a series of gate-SiO2-SiC(3C) structures with different gate materials. Reported are the results of energy band diagram determination and characteristics of interface trap distributions Samples: Characterized were the MOS capacitors fabricated by Acreo AB on 3” n-type 3C-SiC (001) wafers with about 10 μm thick n-type epitaxial layer nitrogen doped in the mid 10 cm. SiO2 layer of thickness tox = 55 nm was deposited by PECVD and wafers were subjected to post-oxidation annealing in wet oxygen for three hours at 950°C, which increased SiO2 thickness by Δtox = 5 nm. Circular Al, Ni, and Au metal gates of 0.7, 0.6, 0.5, 0.4 and 0.3 mm diameter and with different thicknesses: tAl = 25, tNi = 10, tAu = 15 nm were formed by ion beam sputtering and lift-off. Band diagram determination: Optical, electrical and particularly photoelectric methods were used to determine the band diagrams. Extreme precision photoelectric methods developed in our laboratory [2] were applied to determine the flat-band voltage in the dielectric (VG0), the gate-substrate effective contact potential difference (φMS) and the substrate surface |
| Databáze: | OpenAIRE |
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