Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer

Autor:	Alireza Alian, Raul Rodriguez, Sachin Yadav, Uthayasankaran Peralagu, Arturo Sibaja Hernandez, Vamsi Putcha, Ming Zhao, Rana ElKashlan, Bjorn Vermeersch, Hao Yu, Erik Bury, Ahmad Khaled, Nadine Collaert, Bertr Parvais
Přispěvatelé:	Laboratorium for Micro- and Photonelectronics, Electronics and Informatics, Faculty of Engineering
Rok vydání:	2022
Předmět:	HEMTs Radio frequency Performance evaluation MODFETs thermal conductivity Reliability thermal analysis
Zdroj:	ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC).
Popis:	This work investigates scaling of the GaN channel thickness on top of a carbon-doped GaN buffer (cGaN) grown on 200mm Si substrates. Device performance tradeoffs are analyzed in terms of DC, RF, reliability and thermal behavior. A thinner channel improves DIBL, Ioff,Vth roll-off and degrades fT,fmax , PAE, Pout, charge trapping and thermal conductance characteristics. Transconductance was observed to increase under high saturation drain bias for thin and short channels indicating the lateral device scaling potential of cGaN based HEMTs.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4d9b4605337d5dc3378a090e6aa44fc1 https://doi.org/10.1109/essderc55479.2022.9947147 Zobrazit plný text záznamu